Results 41 to 50 of about 103,571 (282)
Scientific ReportsQuantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips +12 more
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MicromachinesThis study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum
An-Chen Liu +3 more
doaj +1 more source
Optimization of the concentration's distribution of the carriers on thickness of epitaxial layers [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2007 A plunger device for liquid epitaxy of АIIIВV semiconductor compositions has been modified. It has been shown that the impurity concentration gradient, creating inner electrical fields in the photodetecting and active regions of semiconductor structures,
Karimov A. V. +4 more
doaj
Growth of strontium ruthenate films by hybrid molecular beam epitaxy
, 2017 We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Ahadi, Kaveh +3 more
core +2 more sources
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
Advanced Functional Materials, EarlyView.The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
Effect of epitaxy on interband transitions in ferroelectric KNbO3
New Journal of Physics, 2015 Very large lattice strain and strain-induced polarization are achieved in KNbO _3 using epitaxial growth of a thin KNbO _3 film onto a (001)-oriented SrTiO _3 single-crystal substrate.
M Tyunina +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source
Molecular-beam epitaxy of CrSi_2 on Si(111) [PDF]
, 1988 Chromium disilicide layers have been grown on Si(111) in a commercial molecular‐beam epitaxy machine. Thin layers (10 nm) exhibit two epitaxial relationships, which have been identified as CrSi_2(0001)//Si(111) with CrSi_2[1010]//Si[101], and CrSi_2(0001)
Chang, K. T. +5 more
core
Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy
, 2015 Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by ...
Baehtz, C. +8 more
core +1 more source
Silicon on Nothing Mems Electromechanical Resonator [PDF]
, 2007 The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components.
Alexandre Talbot +11 more
core +5 more sources