Results 51 to 60 of about 103,571 (282)

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy [PDF]

Journal of Crystal Growth, 2017
While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced
Abderrafi, K., Ribeiro-Andrade, R., Nicoara, N., Cerqueira, M. F., Gonzalez Debs, M., Limborço, H., Salomé, P. M. P., Gonzalez, J. C., Briones, F., Garcia, J. M., Sadewasser, S.   +10 more
openaire   +3 more sources

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Tuning Epitaxial Growth of Nb on MgO(100)

Advanced Physics Research, 2023
Niobium thin films are central to many applications, such as superconducting radio‐frequency cavities and superconducting qubits, due to its relatively high superconducting temperature and easiness to form heterostructures.
Laura Guasco, Liz Montañez Huaman, Yury N. Khaydukov, Thomas Keller, Sabine Pütter   +4 more
doaj   +1 more source

Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy

, 2011
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman ...
Akifumi Kasamatsu, Alonso, Hanafusa, Harold M. H. Chong, Hirashita, Hiroaki Hanafusa, Hiroshi Mizuta, Kutsukake, Lee, Lutz, Maekawa, Maiti, Nobumitsu Hirose, Rosenbrad, Saito, Sawano, Sawano, Sawano, Takashi Mimura, Toshiaki Matsui, Tsang, Wong, Wu, Yoshiyuki Suda, Zhu   +24 more
core   +1 more source

Efficient Charge Transport in Zero‐Dimensional Perovskite for Ultrahigh‐Sensitivity X‐Ray Detection

Advanced Functional Materials, EarlyView.
A novel mono‐octahedral 0D Bi‐based Dpy3Bi2I12 perovskite strengthens the internal hydrogen bonds and forms a quasi‐2D lattice, exhibits exceptional charge transport and mobility, achieving high X‐ray sensitivity and ultralow‐dose imaging, and setting a new benchmark for 0D detector performance.
Xin Song, Lijie Wang, Jiayi Wang, Yafeng Xu, Renqian Zhou, Shulin Chen, Partha Maity, Peng Yuan, Yongcao Zhang, Bingyao Shao, Jian‐Xin Wang, Jun Yin, Ren‐Wu Huang, Youyou Yuan, Taimoor Ahmad, Osman M. Bakr, Omar F. Mohammed   +16 more
wiley   +1 more source

MOLECULAR-DYNAMICS SIMULATION OF EPITAXIAL GROWTH OF NANOSIZED LEAD HETEROSTRUCTURES ON NICKEL [PDF]

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2012
Epitaxial growth of nanosized Pb heterostructures (islands) on faces (100) and (111) of Ni was simulated using the isotheral molecular dynamics. Specific features were revealed of the epitaxy in metallic systems in comparison with Lennard-Jones systems ...
A.G. Bembel, S.A. Vasilyev, V.M. Samsonov   +2 more
doaj  

Depositing spacing layers on magnetic film with liquid phase epitaxy [PDF]

, 1975
Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is ...
Moody, J. W., Sanfort, R. M., Shaw, R. W.   +2 more
core   +1 more source

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

Advanced Functional Materials, EarlyView.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne, Denis Alikin, Milica Vasiljevic, Victor B. Tinti, Javier Zamudio‐García, Leonardo Soares de Oliveira, Megan Landberg, Dimitrios Koukoulis, Huaiyu Chen, Jesper Wallentin, David Marrero‐López, Astri Bjørnetun Haugen, Sizhao Huang, Dennis Christensen, Nini Pryds, Alexander Tselev, Andrei Kholkin, Vincenzo Esposito   +17 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source