Results 61 to 70 of about 138,462 (342)

Solvent‐Free Bonding Mechanisms and Microstructure Engineering in Dry Electrode Technology for Lithium‐Ion Batteries

Advanced Functional Materials, EarlyView.
Dry electrode technology revolutionizes battery manufacturing by eliminating toxic solvents and energy‐intensive drying. This work details two promising techniques: dry spray deposition and polymer fibrillation. How their unique solvent‐free bonding mechanisms create uniform microstructures for thicker, denser electrodes, boosting energy density and ...
Yuhao Liang, Hao Long, Zimo Huang, Ting He, Xueming Chen, Meng Li, Hao Chen, Shanqing Zhang   +7 more
wiley   +1 more source

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

, 2010
We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system.
Atlasov, Baier, Bastard, Cao, Chua, Chui, Dupuis, E. Pelucchi, Esser, Eytan, Feng, Funke, Gallo, Giannoules, Grosse, Gurioli, L.O. Mereni, Leu, Levy, Meier, Merano, Mereni, Moret, Pelucchi, Pelucchi, R.J. Young, Richter, Roberts, Ropers, Rudra, Sanvitto, Savona, Shinohara, Sirigu, Troccoli, V. Dimastrodonato, van der Ziel, Zhu, Zimmermann   +38 more
core   +1 more source

Molecular layer epitaxy

Thin Solid Films, 1986
Abstract Molecular layer epitaxy (MLE) of GaAs related compounds and Si with SiO 2 deposition has been developed to realize the tera-hertz operating devices. At sufficiently low process temperature, lower than in the conventional growth method, device quality epitaxial layers were achieved by MLE.
Jun-ichi NISHIZAWA, Toru KURABAYASHI
openaire   +2 more sources

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies

Materials for Quantum Technology
Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond.
Nimba Oshnik, Sebastian Westrich, Nina Burmeister, Oliver Roman Opaluch, Lahcene Mehmel, Riadh Issaoui, Alexandre Tallaire, Ovidiu Brinza, Jocelyn Achard, Elke Neu   +9 more
doaj   +1 more source

Transcrystallization at the interface of polyethylene single-polymer composites [PDF]

Materials Research, 1999
The phenomenon of transcrystallization was studied at the interface of UHMWPE fibers embedded in an HDPE matrix. It was hoped that epitaxial crystallization in such model composites could eventually be used to improve adhesion between these high-strength
H.-J. Kestenbach, J. Loos, J. Petermann
doaj   +1 more source

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

, 2004
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by
Fiederling, R., Gould, C., Keller, D., Molenkamp, L. W., Ossau, W., Rüster, C., Schmidt, G., Slobodskyy, T.   +7 more
core   +1 more source

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

Advanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun, Min Gyeong Shin, Uje Choi, Jieun Yeon, Jae Joon Kim, Yangjin Lee, Kwanpyo Kim   +6 more
wiley   +1 more source

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source

Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

Nature Communications, 2019
Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex ...
Monica Bollani, Marco Salvalaglio, Abdennacer Benali, Mohammed Bouabdellaoui, Meher Naffouti, Mario Lodari, Stefano Di Corato, Alexey Fedorov, Axel Voigt, Ibtissem Fraj, Luc Favre, Jean Benoit Claude, David Grosso, Giuseppe Nicotra, Antonio Mio, Antoine Ronda, Isabelle Berbezier, Marco Abbarchi   +17 more
doaj   +1 more source