Results 81 to 90 of about 138,462 (342)
Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters
Advanced Functional Materials, EarlyView.Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak +8 more
wiley +1 more source
, 2011 The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption ...
Fedoseyev, V. G. +4 more
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Efficient Charge Transport in Zero‐Dimensional Perovskite for Ultrahigh‐Sensitivity X‐Ray Detection
Advanced Functional Materials, EarlyView.A novel mono‐octahedral 0D Bi‐based Dpy3Bi2I12 perovskite strengthens the internal hydrogen bonds and forms a quasi‐2D lattice, exhibits exceptional charge transport and mobility, achieving high X‐ray sensitivity and ultralow‐dose imaging, and setting a new benchmark for 0D detector performance.
Xin Song +16 more
wiley +1 more source
A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality
Cumhuriyet Science JournalThis study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
doaj +1 more source
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Nano Letters, 2017 We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers.
Sergio Fernández-Garrido +12 more
openaire +4 more sources
Advanced Materials, EarlyView.AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll +19 more
wiley +1 more source
Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)
Small StructuresInsulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices.
Ju‐Hyun Jung +10 more
doaj +1 more source
Growth and applications of GeSn-related group-IV semiconductor materials
Science and Technology of Advanced Materials, 2015 We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising ...
Shigeaki Zaima +5 more
doaj +1 more source
THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
Вестник Дагестанского государственного технического университета: Технические науки, 2016 At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
Т. E. Sarkarov
doaj +1 more source
Molecular-beam epitaxy of CrSi_2 on Si(111) [PDF]
, 1988 Chromium disilicide layers have been grown on Si(111) in a commercial molecular‐beam epitaxy machine. Thin layers (10 nm) exhibit two epitaxial relationships, which have been identified as CrSi_2(0001)//Si(111) with CrSi_2[1010]//Si[101], and CrSi_2(0001)
Chang, K. T. +5 more
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