Results 81 to 90 of about 103,571 (282)
A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality
Cumhuriyet Science JournalThis study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
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, 2011 The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption ...
Fedoseyev, V. G. +4 more
core
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Nano Letters, 2017 We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers.
Sergio Fernández-Garrido +12 more
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Advanced Materials Interfaces, EarlyView.This study investigates thermally CVD‐deposited AlN/TiAlN dual‐layer coatings over a Si substrate, focusing on the temperature‐dependent process‐structure relationship. Systematic characterization reveals that a dense AlN interlayer combined with an optimally deposited TiAlN top layer provides enhancement in mechanical strength, tribological stability,
Soham Das +4 more
wiley +1 more source
Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)
Small StructuresInsulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices.
Ju‐Hyun Jung +10 more
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Growth and applications of GeSn-related group-IV semiconductor materials
Science and Technology of Advanced Materials, 2015 We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising ...
Shigeaki Zaima +5 more
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THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
Вестник Дагестанского государственного технического университета: Технические науки, 2016 At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
Т. E. Sarkarov
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Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics
Advanced Materials Interfaces, EarlyView.This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
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Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
Beilstein Journal of Nanotechnology, 2018 In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy.
Alexey D. Bolshakov +9 more
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, 2012 We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots grown by droplet
Choi +17 more
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