Results 101 to 110 of about 311 (157)

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory
application/pdf 学術論文 (Article) 294853 ...
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A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doubler. [PDF]

Microsyst Nanoeng
Kwak B, Cho Y, Han C, Lee J, Kim S, Shin Y, Choi J, Kim D, Lee SJ, Lee S, Kim HM, Shin W, Kwon D.   +12 more
europepmc   +1 more source

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. [PDF]

Nanomaterials (Basel), 2021
Zhang Q, Gu J, Xu R, Cao L, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J.   +18 more
europepmc   +1 more source

Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Li J, Gao Y, Zhang DW.
europepmc   +1 more source

3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application. [PDF]

Nanomaterials (Basel)
Qian L, Liu T, Liao M, Guo X, Xu S, Xu M, Zhang DW.   +6 more
europepmc   +1 more source

Repurposing Si CMOS nonidealities for stochastic and analog image processing. [PDF]

Sci Adv
Kwak B, Koo RH, Han C, Shin Y, Choi J, Kim D, Lee J, Im J, Cho Y, Lee JH, Shin W, Kwon D.   +11 more
europepmc   +1 more source

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]

Commun Eng
Chung SW, Yoon SH, Jeong JK.
europepmc   +1 more source

Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter. [PDF]

Micromachines (Basel)
Wang B, Tang Z, Song Y, Liu L, Yang W, Wu L.   +5 more
europepmc   +1 more source

Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiN_x Stress-Engineered Technique. [PDF]

Nanomaterials (Basel)
Deng C, Tang C, Wang P, Cheng WC, Du F, Wen K, Zhang Y, Jiang Y, Tao N, Wang Q, Yu H.   +10 more
europepmc   +1 more source

Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Kola SR, Li Y.
europepmc   +1 more source