Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current
We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as~10~(17) A/mm at V_(GS)= 0 V and V_(DS) = 5 V.The threshold voltage is ...
Gu GD(顾国栋) +7 more
core
Repurposing Si CMOS nonidealities for stochastic and analog image processing. [PDF]
Kwak B +11 more
europepmc +1 more source
Array of Cointegrated Transistor-Based Artificial Neurons and Synapses for Neuromorphic Computing. [PDF]
Lee SW +9 more
europepmc +1 more source
Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]
Chung SW, Yoon SH, Jeong JK.
europepmc +1 more source
Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter. [PDF]
Wang B +5 more
europepmc +1 more source
Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique. [PDF]
Deng C +10 more
europepmc +1 more source
Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]
Kola SR, Li Y.
europepmc +1 more source
Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors. [PDF]
Chao CY +8 more
europepmc +1 more source
High-Performance Carbon Nanotube Electronic Devices: Progress and Challenges. [PDF]
Zhang Z, Zhang N, Zhang Z.
europepmc +1 more source
Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications. [PDF]
Karimi K, Fardoost A, Javanmard M.
europepmc +1 more source

