Results 81 to 90 of about 3,848,813 (157)

Trap Depth Extraction using New Equation considering Tunneling Mechanism in Gate-Induced Drain Leakage Random Telegraph Noise [PDF]

, 2013
학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2013. 2. 신형철.As device continue to scale down, the effect of an individual defect on device performance and reliability becomes important issue.
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core  

The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current

, 2012
Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity.
Lau, W. S., Yang, Peizhen., Chan, L., Siah, S. Y.   +3 more
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Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation. [PDF]

Discov Nano, 2023
Lin JT, Chang YC.
europepmc   +1 more source

The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of GNR-FETs. [PDF]

Sci Rep, 2023
Ahmad MA, Kumar J.
europepmc   +1 more source

Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM. [PDF]

Micromachines (Basel), 2022
Sun M, Baac HW, Shin C.
europepmc   +1 more source

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

Oxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress

, 1992
Some holes created from band-to-band (B-B) tunneling in the deep-depletion region of the drain can be injected into the gate oxide and reduce the vertical field there. As a result, gate-induced drain leakage (GIDL) current decreases.
Lai, Pui T, Ma, ZJ, Cheng, YC
core  

Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs

, 1999
Degradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a ...
Xu, Jingping, Lai, PT
core  

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory
application/pdf 学術論文 (Article) 294853 ...
openaire   +1 more source

Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications

, 2009
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core   +1 more source