Results 81 to 90 of about 311 (157)

DRAM 셀 트렌지스터의 GIDL RTN에 의한 산화막 트랩의 위치 의존성 분석 [PDF]

, 2014
학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2014. 2. Shin Hyungcheol.As device dimensions are minimized, random telegraph noise (RTN) is dominant in determining the performance and reliability of metal-oxide-semiconductor field effect transistor (MOSFET).
콴뉴엔기아
core  

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

, 2018
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is investigated. CHC stress generates negative oxide charges while GIDL stress generates positive oxide charges in the gate oxide near drain region.
Kim, D, Kim, C, Kang, B, Park, J, Lee, S, Lee, C   +5 more
core   +1 more source

GIDL 스트레스 조건 하에서 나노 크기 PMOSFET 열화 분석 [PDF]

, 2017
학위논문 (석사)-- 서울대학교 대학원 공과대학 전기·정보공학부, 2017. 8. 이종호.The device degradation under gate-induced drain leakage (GIDL) mode stress is studied in nano-scale p-MOSFET for DRAM peripheral circuit.
조수앙
core  

Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique

, 2001
In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar
AATISH KUMAR, Dunga, M. V., Ramgopal Rao, V., DUNGA, MOHAN V, Kumar, A., RAMGOPAL RAO, V   +5 more
core   +1 more source

Oxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress

, 1992
Some holes created from band-to-band (B-B) tunneling in the deep-depletion region of the drain can be injected into the gate oxide and reduce the vertical field there. As a result, gate-induced drain leakage (GIDL) current decreases.
Lai, Pui T, Ma, ZJ, Cheng, YC
core  

Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique

, 2002
Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional ...
VASI, J, Vasi, J., Ramgopal Rao, V., Woo, J. C. S., Cheng, Baohong, Kumar, A., CHENG, B, AATISH KUMAR, Najeev-ud-din,, WOO, JCS, Dunga, M. V., DUNGA, MV, NAJEEB-UD-DIN HAKIM, RAMGOPAL RAO, V   +13 more
core   +1 more source

High field induced stress suppression of GIDL effects in TFTs

, 2010
Gate-Induced drain leakage (GIDL) is an unwanted short-channel effect that occurs at higher drain biases in an overdriven off state of a transistor. The GIDL is the result of a deep depletion region that forms in the drain at high drain-to-gate biases ...
McCabe, Andrew
core  

Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs

, 1999
Degradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a ...
Xu, Jingping, Lai, PT
core  

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation. [PDF]

Discov Nano, 2023
Lin JT, Chang YC.
europepmc   +1 more source