Results 71 to 80 of about 3,848,813 (157)

Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric [PDF]

, 1995
This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics.
Ng, WT, Xu, Z, Lai, PT
core   +1 more source

THE LOCAL THERMAL ANNEALING METHOD FOR CURING OF GATE OXIDE DAMAGE UTILIZING GATE-INDUCED DRAIN LEAKAGE CURRENT IN MOSFET

, 2020
게이트-유발 드레인 누설 전류를 활용한 전계효과 트랜지스터의 게이트 절연막 손상을 치유하는 방법이 개시된다. 본 발명의 일 실시예에 따른 트랜지스터의 열처리 방법은 트랜지스터의 열처리 방법에 있어서, 상기 트랜지스터의 게이트 전극과 드레인 전극 사이에 복구 전압을 인가하는 단계; 상기 복구 전압을 이용하여 소스 전극과 상기 드레인 전극 사이에 형성된 채널 영역에 게이트-유발 드레인 누설 전류(GIDL; gate-induced drain leakage ...
최양규, 박준영, 윤대환
core   +1 more source

1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Reservoir computing (RC), a computational paradigm inspired by the recurrent neural networks (RNNs), offers a promising framework for efficient temporal processing with minimal training overhead.
Md Yasir Bashir, Lalith Adithya Sai C., Shubham Sahay   +2 more
doaj   +1 more source

High field induced stress suppression of GIDL effects in TFTs [PDF]

, 2010
Gate-Induced drain leakage (GIDL) is an unwanted short-channel effect that occurs at higher drain biases in an overdriven off state of a transistor. The GIDL is the result of a deep depletion region that forms in the drain at high drain-to-gate biases ...
McCabe, Andrew
core   +1 more source

Random Telegraph Signal-Like Fluctuation Created by Fowler–Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

, 2010
We generated traps inside gate oxide in gate–drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler–Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time ...
Heesang Kim, Hyungcheol Shin, Jae-Goan Jeong, Byoungchan Oh, Sung-Joo Hong, Jong-Ho Lee, Byung-Gook Park, Seon-Yong Cha, Kyungdo Kim   +8 more
core   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures

International audienceThis paper presents a comprehensive experimental analysis of the gate-induced drain leakage (GIDL) in two-level stacked nanowire SOI nMOSFETs for operating temperatures between 300 K and 580 K. Devices with different channel lengths
Vinet, Maud, Barraud, Sylvain, Cassé, Mikaël, de Souza, Michelly, Faynot, Olivier, Pavanello, Marcelo, Cerdeira, Antonio, Estrada, Magali   +7 more
core   +1 more source

GIDL characteristics on Si1-xGex pFinFET for Low Power Transistors [PDF]

, 2016
학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 신형철.This dissertation presents an investigation of Gate-Induced-Drain-Leakage (GIDL) current in SiliconGermanium (SiGe) p-type FinFET for low power transistors and proposes the guidelines to reduce GIDL current.
강덕승
core  

Potential of a Sensitive Silicon Mechanical Stress Sensor Based on a Change in Gate-Induced-Drain Leakage Current

, 2011
Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity.
S.Y. Siah, Peizhen Yang, L. Chan, Wai S. Lau, V. Ho   +4 more
core   +1 more source

Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices

, 1998
In this paper, we describe the application of gate-induced-drain-leakage (GIDL) current for the characterization of gate edge damage which occurs during the plasma etch processes.
Rao, V. R., SRIDHARAN, A, Chan, Y. D., Brozek, T., BROZEK, T, CHAN, YD, WERKING, JD, Viswanathan, C. R., RAMGOPAL RAO, V, Werking, J. D., VISWANATHAN, CR, Sridharan, A.   +11 more
core   +1 more source