Results 141 to 150 of about 3,848,813 (157)
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2017 Devices for Integrated Circuit (DevIC), 2017
In this paper a Dual Metal Insulated Shallow Extension Gate All Around (DMISEGAA) MOSFET has been proposed to solve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET for improved analog performance. DMISEGAA MOSFET improves gate leakages by minimizing the tunneling from Valence Band to Conduction Band
Sonam Rewari +4 more
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In this paper a Dual Metal Insulated Shallow Extension Gate All Around (DMISEGAA) MOSFET has been proposed to solve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET for improved analog performance. DMISEGAA MOSFET improves gate leakages by minimizing the tunneling from Valence Band to Conduction Band
Sonam Rewari +4 more
openaire +1 more source
Japanese Journal of Applied Physics, 2003
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The
Choi, YK Choi, Yang-Kyu +3 more
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Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The
Choi, YK Choi, Yang-Kyu +3 more
openaire +1 more source
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
Puget, S. +7 more
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Puget, S. +7 more
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Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002
Yang-Kyu Choi +3 more
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Yang-Kyu Choi +3 more
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Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage
IEEE Electron Device Letters, 2023Huaxiang Yin, Anyan Du, Jun Luo
exaly
METHOD AND DEVICE TO REDUCE GATE-INDUCED DRAIN LEAKAGE (GIDL) CURRENT IN THIN GATE OXIDE MOSFETS
2002MOULI CHANDRA V, ROBERTS CEREDIG
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