Results 141 to 150 of about 3,848,813 (157)
Some of the next articles are maybe not open access.

Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance

2017 Devices for Integrated Circuit (DevIC), 2017
In this paper a Dual Metal Insulated Shallow Extension Gate All Around (DMISEGAA) MOSFET has been proposed to solve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET for improved analog performance. DMISEGAA MOSFET improves gate leakages by minimizing the tunneling from Valence Band to Conduction Band
Sonam Rewari   +4 more
openaire   +1 more source

Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs

Japanese Journal of Applied Physics, 2003
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and DG thin-body devices are reported for the first time. The
Choi, YK Choi, Yang-Kyu   +3 more
openaire   +1 more source

1TBulk eDRAM using Gate-Induced Drain-Leakage (GIDL) Current for High Speed and Low Power Applications

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
Puget, S.   +7 more
openaire   +2 more sources

The Enhancement of Gate-Induced-Drain-Leakage (gidl) Current in Soi Mosfet and its Impact on Soi Device Scaling

IEEE International SOI Conference, 2005
null Jian Chen   +3 more
openaire   +1 more source

Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices

Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002
Yang-Kyu Choi   +3 more
openaire   +1 more source

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

IEEE Electron Device Letters, 2023
Huaxiang Yin, Anyan Du, Jun Luo
exaly  

Home - About - Disclaimer - Privacy