Results 31 to 40 of about 311 (157)

Gate induced drain leakage reduction with analysis of gate fringing field effect on high-kappa/metal gate CMOS technology

, 2015
We suggest the optimum permittivity for a high-kappa/metal gate (HKMG) CMOS structure based on the trade-off characteristics between the fringing field induced barrier lowering (FIBL) and gate induced drain leakage (GIDL). By adopting the high-kappa gate
Jung, Jae Won, Shin, Sunhae, Kim, Kyung Rok, Jang, Esan   +3 more
core   +1 more source

Revisited approach for the characterization of Gate Induced Drain Leakage

, 2011
International audienceThis work presents a re-investigation of the electrical characterisation of Gate Induced Drain Leakage (GIDL) [1][2]. The limits of the previously proposed extraction methods are underlined and a new approach is introduced. This new
Vinet, Maud, Cuiqin Xu, Perrine Batude, Mireille Mouis, Quentin Rafhay, Rafhay, Quentin, Ghibaudo, Gérard, Xu, Cuiqin, Maud Vinet, Batude, Perrine, Gerard Ghibaudo, Mouis, Mireille   +11 more
core   +1 more source

Junction depth dependence of the gate induced drain leakage in shallow junction source/drain-extension nano-CMOS

, 2019
This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SIDE ...
Song, SH, Jeong, YH, Kim, JC, Jung, SW
core   +1 more source

Low Gate-Induced Drain Leakage and Its Physical Origins in Si Nanowire Transistors

, 2011
Gate-induced drain leakage (GIDL) in Si nanowire transistors fabricated on silicon-on-insulator substrates is systematically studied. In narrow nanowire transistors, GIDL current is obtained by relatively small potential difference between the gate ...
Yukio Nakabayashi, Koichiro Zaitsu, Takamitsu Ishihara, Masumi Saitoh, Toshinori Numata   +4 more
core   +1 more source

Machine Learning‐Driven Variability Analysis of Process Parameters for Semiconductor Manufacturing

Advanced Intelligent Systems, Volume 8, Issue 5, May 2026.
This research presents a machine learning approach that integrates nonlinear variation decomposition (NLVD) with statistical techniques to quantify the contribution of individual unit processes to performance and variance of figure of merit (FoM) at the LOT level.
Sinyeong Kang, Hyeok Yun, Kyeongrae Cho, Seungjoon Eom, Soomin Kim, Seongsoo Jeong, Rockhyun Baek   +6 more
wiley   +1 more source

Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD‐SOI MOSFETs

Active and Passive Electronic Components, Volume 2015, Issue 1, 2015., 2015
TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and ...
A. Ciprut, A. Chelly, A. Karsenty, Gerard Ghibaudo   +3 more
wiley   +1 more source

Reduction of gate-induced drain leakage current of polycrystalline silicon thin-film transistor by drain bias sweeping

, 2015
Method of drain bias sweeping is reported to reduce the gate-induced drain leakage (GIDL) current but with other electrical parameters unaffected for p-type polycrystalline silicon thin-film transistors.
Wu, Yong, Huaisheng Wang, Dongli Zhang, Haiqin Zhou, Zhou, Haiqin, Mingxing Wang, Wang, Huaisheng, Wang, Mingxing, He, Jin, Yong Wu, Jin He, Zhang, Dongli   +11 more
core   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

FinFETs: From Devices to Architectures

Advances in Electronics, Volume 2014, Issue 1, 2014., 2014
Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to the presence of multiple (two/three) gates, FinFETs/Trigate FETs are able to tackle short‐channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology ...
Debajit Bhattacharya, Niraj K. Jha, Jaber Abu Qahouq   +2 more
wiley   +1 more source

n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents

, 2016
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (Ig) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in linear and saturation regions ...
Caio Malingre Magan, Joao Antonio Martino, De Andrade, Maria Gloria Cano [UNESP], Martino, Joao Antonio, Maria Gloria Cano de Andrade, Cor Claeys, Magan, Caio Malingre [UNESP], Simoen, Eddy, Claeys, Cor, Eddy Simoen   +9 more
core   +2 more sources