Results 111 to 120 of about 8,273 (227)
750 A/6 500 V High Power Density IGBT Module for Rail Transit Application
Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of ...
LIU Guoyou +4 more
doaj
In a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
doaj +1 more source
Research on the Press-pack IGBT with High SCSOA
DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing +5 more
doaj
Slutsteg för effektregulator [PDF]
Syftet med detta examensarbete var att hitta en lämplig huvudkomponent som passar för en effektregulator. Effektregulatorn kopplas till elvärmen i hus, såsom golvvärme och radiatorer.
Skogberg, Casimir
core
Development of Power Semiconductor Devices Database for Knowledge-Based Systems [PDF]
Since 1970, various types of power semiconductor devices have been developed and become commercially available. Meanwhile database management and expert systems have been used in the field of power electronics for various applications.
Shaheen, Ghassan Mohammed
core
Development of Smart Lead-Acid Battery Charger for Electric Vehicle Application [PDF]
The battery charger is a critical part in an electric vehicle (EV) because it charges the battery, which is the weakest part of it. An unduly long charging time limits the use of the EV.
Ibrahim Nour, Mutasim
core
Accelerated Aging System for Prognostics of Power Semiconductor Devices [PDF]
Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure.
Celaya, Jose R. +3 more
core +1 more source
Double gate IGBT with control of active hole injection: principle of low loss by numerical analyses [PDF]
電子デバイス/半導体電力変換 合同研究会, 10月29日-30日, 2015年, 長崎歴史文化博物館, 長崎県Double gate IGBT is proposed and confirmed significant reduction of turn-off loss with TCAD simulation. Conventional IGBTs have a problem of large turn-off loss with stored carrier in N-base.
原田, 翔平 +2 more
core
Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology
With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
Tan, Cher Ming., Tse, Man Siu.
openaire +1 more source
Insulated Gate Bipolar Transistor (IGBT) may convey high current and sustain high breakdown voltages; it may provide high power control. In a sense, how IGBT demonstrates the capability of power control was not specifically described, and the equivalent bipolar junction transistors (BJT) activated by an applied bias to the insulated gate is intriguing.
Hsin-Chia Yang +3 more
openaire +1 more source

