Results 171 to 180 of about 8,273 (227)

Promising Algorithm Addressing Characteristic Curves of Insulated Gated Bipolar Transistor (IGBT) Fitted by Applying Bipolar Transistor Driven by Insulated Gate Bias

2021 7th International Conference on Applied System Innovation (ICASI), 2021
Power devices have been overwhelmingly popular for the last decades. Insulated Gate Bipolar Transistor (IGBT) is quite dominant for the capability of providing relatively high current at pretty high sustaining breakdown voltages. The underlying bipolar junction transistors (including NPN and PNP) get activated as the bias is applied to the isolated ...
Hsin-Chia Yang, Sung-Ching Chi, Pei-Jun Yang, Chia-Chun Lin, Kuan-Hung Chen, You-Sheng Lin   +5 more
openaire   +1 more source

Series Connection of Insulated Gate Bipolar Transistors (IGBTs)

IEEE Transactions on Power Electronics, 2012
High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
openaire   +1 more source

Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)

2021 IEEE Region 10 Symposium (TENSYMP), 2021
In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation.
Gyeongyeop Lee, Jonghyeon Ha, Jungsik Kim   +2 more
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"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
openaire   +1 more source

A transient model for insulated gate bipolar transistors (IGBTs)

International Journal of Electronics, 2008
In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT.
Sehwan Ryu, Myungsoo Lee, Mohsen A. Hajji, Hyungkeun Ahn, Deukyoung Han, Mahmoud El Nokali   +5 more
openaire   +1 more source

Thermal reliability of power insulated gate bipolar transistor (IGBT) modules

Twelfth Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Proceedings, 2002
Thermal behavior of power insulated gate bipolar transistor (IGBT) modules was studied in this paper experimentally. Due primarily to the thermal mismatch in IGBT sandwich structure, thermal stress induced solder fatigue failures, such as the forming and growing of voids and cracks in IGBT solder layers, were quasi-dynamically observed in thermal ...
null Wuchen Wu, null Guo Gao, null Limin Dong, null Zhengyuan Wang, M. Held, P. Jacob, P. Scacco   +6 more
openaire   +1 more source

Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

IEEE Transactions on Reliability, 2009
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and ...
N. Patil, J. Celaya, D. Das, K. Goebel, M. Pecht   +4 more
openaire   +1 more source

Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

Materials Science Forum, 2005
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)

2008 International Conference on Prognostics and Health Management, 2008
Insulated Gate Bipolar Transistors (IGBTs) are used in applications such as the switching of automobile and train traction motors, high voltage power supplies, and in aerospace applications such as switch mode power supplies (SMPS) to regulate DC voltage.
Nishad Patil, Diganta Das, Kai Goebel, Michael Pecht   +3 more
openaire   +1 more source

A Bipolar "Command Charge" Pulser for Lasers with Insulated Gate Bipolar Transistors (IGBT's)

Twentieth Conference Record on Power Modulator Symposium, 2005
1. Abstract The design approach and practical results on a 2 joule, 26 kV, 6,5kHz pulser, using IGBT's as primary switches, are reported. These switches are arranged in a conventional inverter bridge configuration. A voltage step-up pulse transformer, with high voltage secondary capacitor, serves as load.
G.L. Bredenkamp, J.J. Nel, D.J. Mulder
openaire   +1 more source