Results 181 to 190 of about 8,273 (227)
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Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability
2020This chapter has presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods, and protection methods. Additionally, optimization and protection methods can be roughly classified in simple (and cheap) and ...
Luo, Haoze +2 more
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High accuracy SPICE behavioral macromodeling of insulated gate bipolar transistor (IGBT)
APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition, 2002This paper presents a new behavioral IGBT macromodel, that uses the enhanced capabilities of the nonlinear controlled sources implemented in modern SPICE like simulators. It describes the device's internal static equations directly with "in line equation" controlled sources and the nonlinear voltage dependent gate capacitances are piece-wise-linear ...
A. Maxim, D. Andreu, J. Boucher
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2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), 2019
This paper presents a new gate driver concept that allows an online, open-loop adjustment of the switching behavior of power semiconductors during operation. An inductive impedance instead of an ohmic impedance enables the required adjustable gate current and thus the desired gate voltage curve.
Stamer, Fabian +2 more
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This paper presents a new gate driver concept that allows an online, open-loop adjustment of the switching behavior of power semiconductors during operation. An inductive impedance instead of an ohmic impedance enables the required adjustable gate current and thus the desired gate voltage curve.
Stamer, Fabian +2 more
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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance
IEEE Electron Device Letters, 1999In this letter, we report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT's. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated ...
F. Udrea +6 more
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Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT)
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings, 2002The modelling of steady-state characteristics in a trench emitter IGBT structure is presented. The semiconductor equations were solved in two dimensions with physical effects such as carrier-carrier scattering mobility, SRH and Auger recombination included.
L. Sabesan +4 more
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Silicon IGBT (Insulated Gate Bipolar Transistor)
2011The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)
IEEE Electron Device Letters, 1999This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage ...
O. Spulber +5 more
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Impact of dormancy periods on power cycling of insulated gate bipolar transistors (IGBTS)
2016 IEEE Accelerated Stress Testing & Reliability Conference (ASTR), 2016Power cycling is a testing method for power semiconductor devices wherein switching functions are simulated to generate heat and raise junction temperature instead of using a chamber. Failure analysis of devices following the test can provide valuable insight into the failure modes and mechanisms of power electronic devices. Most switching applications
Nathan Valentine, Diganta Das
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Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters.
Z. Shen, T.P. Chow
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IEEE Transactions on Electron Devices, 1998
The switching performance of silicon (Si) punchthrough (PT) and a nonpunchthrough (NPT) insulated gate bipolar transistors (IGBT's) is compared under zero voltage switching (ZVS), both experimentally and using two-dimensional (2-D) device simulator. Extensive experimental results are obtained for both the devices under ZVS turn-on and turn-off, under a
S. Pendharkar, K. Shenai
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The switching performance of silicon (Si) punchthrough (PT) and a nonpunchthrough (NPT) insulated gate bipolar transistors (IGBT's) is compared under zero voltage switching (ZVS), both experimentally and using two-dimensional (2-D) device simulator. Extensive experimental results are obtained for both the devices under ZVS turn-on and turn-off, under a
S. Pendharkar, K. Shenai
openaire +1 more source