Results 11 to 20 of about 8,273 (227)
Hardware design of magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) [PDF]
2017 IEEE 8th Control and System Graduate Research Colloquium (ICSGRC), 2017 This paper presents the hardware design of compact H-bridge magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT) as power device. The new Gate Driver (GD) circuit is tested experimentally with various switching frequency to observe the performance of the circuit.
S.Z Mohammad Noor +4 more
openaire +4 more sources
IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
doaj +1 more source
Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj +1 more source
Micro & Nano Letters, 2021 In this paper, a new trench‐gate field‐stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench‐gate field‐stop IGBT.
Yan‐juan Liu +3 more
doaj +1 more source
Methods of high current magnetic field generator for transcranial magnetic stimulation application [PDF]
, 2015 This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications.
Bouda, N. +4 more
core +3 more sources
Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
doaj +1 more source
Solidifying Power Electronics [Historical] [PDF]
, 2018 More than one century ago, in 1902, American engineer Peter Cooper Hewitt (1861\u20131921) derived the mercury arc-rectifier, enclosed in a glass bulb, from his mercury-vapor lamp of the previous year.
Guarnieri, Massimo
core +1 more source
A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control [PDF]
, 2016 To make the switching impulse (SI) generator more compact, portable and feasible in field tests, a new approach based on transformer boosting was developed.
Albarracín Sánchez, Ricardo +4 more
core +3 more sources
Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors [PDF]
, 2015 In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Amaratunga, G. +7 more
core +1 more source
Current sharing control strategy for IGBTs connected in parallel [PDF]
, 2016 This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented.
Pérez Delgado, Raul +2 more
core +2 more sources