Results 201 to 210 of about 8,273 (227)
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IEEE Transactions on Power Electronics, 1990
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
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It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width ...
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21st Annual IEEE Conference on Power Electronics Specialists, 1991
The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits.
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The drive circuit requirements of the OGBT are explained with the aid of an analytical model. This model can be used to describe the turn-on and turn-off, gate and anode, current and voltage waveforms for general external drive, load, and feedback circuits.
openaire +1 more source
An organic electrochemical transistor for multi-modal sensing, memory and processing
Nature Electronics, 2023, , Tao Li
exaly
A new physics based SPICE sub-circuit model for insulated gate bipolar transistors (IGBTs)
2003The paper describes SPICE simulator implementation of a new, physics based, Finite Element Method (FEM) model for semiconductor simulation. The method is based on unidimensional approach that associates each zone of the semiconductor to a sub-circuit capable of implementation, in any general circuit simulator (such as SPICE), in a modular mode.
Rui Filipe Marques Chibante +2 more
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Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor
Nature Nanotechnology, 2022Luhing Hu, Anh Tuan Hoang, Jong-Hyun Ahn
exaly
The future of ferroelectric field-effect transistor technology
Nature Electronics, 2020Asif Khan, Ali Keshavarzi, Suman Datta
exaly
An organic transistor with light intensity-dependent active photoadaptation
Nature Electronics, 2021Fengjiao Zhang, Chong-an Di
exaly
An elastic and reconfigurable synaptic transistor based on a stretchable bilayer semiconductor
Nature Electronics, 2022Faheem Ershad +2 more
exaly
Moiré synaptic transistor with room-temperature neuromorphic functionality
Nature, 2023Xiaodong Yan, Vinod K Sangwan
exaly