Results 21 to 30 of about 8,273 (227)
Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
Crystals, 2020 The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
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Evaluation of the turn‐off transient controllability for high‐power IGBT modules
IET Power Electronics, 2022 The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching ...
Kun Tan +7 more
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Scaling Design Effects on Surface Buffer IGBT Characteristics
IEEE Journal of the Electron Devices Society, 2022 Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
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Stochastic RUL calculation enhanced with TDNN-based IGBT failure modeling [PDF]
, 2016 Power electronics are widely used in the transport and energy sectors. Hence, the reliability of these power electronic components is critical to reducing the maintenance cost of these assets.
Alghassi, Alireza +2 more
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Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
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The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs) [PDF]
Applied Sciences, 2021 The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was prepared from a hot air leveling (HAL) Sn99Cu0.7Ag0.3 layer with a thickness of 1 ÷ 40 μm.
Adrian Pietruszka +4 more
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Investigation of FACTS devices to improve power quality in distribution networks [PDF]
, 2011 Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
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Energies, 2017 In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability.
Xianjin Huang +3 more
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Energies, 2020 This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki, Krzysztof Górecki
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Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes [PDF]
, 2012 Today, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress.
Medjahed, Hassen +2 more
core +4 more sources