Results 31 to 40 of about 8,273 (227)
Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Probabilistic Monte-Carlo method for modelling and prediction of electronics component life [PDF]
, 2014 Power electronics are widely used in electric vehicles, railway locomotive and new generation aircrafts. Reliability of these components directly affect the reliability and performance of these vehicular platforms.
Alghassi, Ali +3 more
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Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov +2 more
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Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 1994 A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and ...
Mitter, C. S. +3 more
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
, +6 more
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
, 1992 A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing ...
Gilbert, P.V., Neudeck, G.W.
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A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs [PDF]
, 2019 The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke ...
Ghorbani, Hamidreza +3 more
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Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
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The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Metrology and Measurement Systems, 2015 In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed.
Górecki Krzysztof, Górecki Paweł
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