Results 41 to 50 of about 8,273 (227)
High-power active devices [PDF]
, 2006 Very high-power (HP) electronics represents a small part of the electronics market. In semiconductor terms, HP represents a world device market of 600 million euros out of a total 200 billion euros for all semiconductors—a mere 0.3 per cent. At the multi-
Carroll, E
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A Simplified Spice Model for IGBT
Active and Passive Electronic Components, 1998 A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi +4 more
doaj +1 more source
The parameters identification and validation for IGBT based on optimization algorithm [PDF]
, 2014 Version of ...
Gao, Y, Guo, S, Miao, Y, Wang, D
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Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
High Voltage, EarlyView.ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior [PDF]
, 2017 Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields.
Corfield, Martin +3 more
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High Voltage, EarlyView.ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source
Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film
IEEE Journal of the Electron Devices Society, 2020 A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
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Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
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Weibull‐Neural Network Framework for Wind Turbine Lifetime Monitoring and Disturbance Identification
Wind Energy, Volume 29, Issue 4, April 2026.ABSTRACT Wind turbines are vital for sustainable energy, yet their reliability under diverse operational and environmental conditions remains a challenge, often leading to costly failures. This study presents a novel Weibull‐Neural Network Framework to enhance wind turbine lifetime monitoring by estimating reliability (R(t)) and mean residual life (MRL)
Fatemeh Kiadaliry +2 more
wiley +1 more source
Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT [PDF]
, 2018 3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools.
De Souza, M. +4 more
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