Results 51 to 60 of about 8,273 (227)
Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux
Advanced Materials, Volume 38, Issue 5, 22 January 2026.This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang +7 more
wiley +1 more source
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +1 more source
The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) [PDF]
IEEE Transactions on Nuclear Science, 1986 The effects of neutrons on the operating characteristics of Insulated Gate Bipolar Transistors (IGBT) are described. Experimental results are presented for devices that have been irradiated up to a fluence of 1013 neutrons/cm2, and an analytical model is presented which explains the observed effects. It is found that the on-state voltage increases, the
A. R. Hefner +2 more
openaire +1 more source
A Hybrid Ultra‐High Voltage DC Transformer With Digital Twin‐Driven Operation and Control
Digital Twins and Applications, Volume 3, Issue 1, January/December 2026.This study introduces a digital twin‐driven hybrid ultra‐high‐voltage DC transformer (UHVDCT) that combines high‐capacity LCCs with low‐capacity MMCs at the UHV side. This innovative topology reduces MMC requirements by 32.9% while ensuring stable power flow and dynamic reactive balance through real‐time virtual‐physical synchronization.
Ling Xu +6 more
wiley +1 more source
Silicon device performance measurements to support temperature range enhancement [PDF]
Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast
Askew, Ray +5 more
core +4 more sources
Reliability evaluation of MMC system considering working conditions
The Journal of Engineering, 2018 The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can
Tao Zheng +3 more
doaj +1 more source
Characterization of an integrated buck converter using infrared thermography [PDF]
, 2014 This study deals with new integrated systems for power electronics applications including wide-gap semiconductors. Integration of Silicon carbide (SiC) components provides for instance new perspectives with higher temperature ...
Haussener, Marion +4 more
core +2 more sources
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This study introduces a new modular multilevel inverter that can produce five levels of positive voltage using only six power switches and five DC voltage sources. The basic unit is composed of a single‐ and double‐source (SDS) unit. SDS reduces the number of power electronic components, such as the insulated gate bipolar transistors, freewheeling ...
Naser Fakhri +4 more
wiley +1 more source
Thermal Impedance Model of High Power IGBT Modules Considering Heat Coupling Effects [PDF]
, 2014 Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability performance of power electronic systems, thus the thermal information of critical points inside module like junction temperature must be accurately ...
Bahman, Amir Sajjad +2 more
core +2 more sources
A nine‐level T‐type inverter (9L‐TTI) with voltage boost capability
IET Power Electronics, Volume 19, Issue 1, January/December 2026.A new multi‐level inverter topology with boosting feature considering the reduced switch count has been presented, compared and validated. Abstract This paper introduces a 9L T‐type boost inverter (9L‐TTI) based multilevel topology, which generates a nine‐level output voltage in the boost mode.
Zarren Firdous +5 more
wiley +1 more source