Results 61 to 70 of about 8,273 (227)
A three‐phase three‐level converter with shared flying capacitors
IET Power Electronics, Volume 19, Issue 1, January/December 2026.Three‐phase multilevel converters use a high number of components which increases their size. As specific weight reduction is a work of interest for embedded system applications, this paper presents a topology aiming to optimize volume and mass for a three‐level three‐phase inverter. The number of passive and active components is reduced thanks to the ‘
Maxime Pain +2 more
wiley +1 more source
Structure Oriented Compact Model for Advanced Trench IGBTs without Fitting Parameters for Extreme Condition: part I [PDF]
, 2011 2011 22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2011, Oct 3-7, 2011, Universit Bordeaux 1, Domaine Haut Carr, Agora Talence, FranceA device structure based compact model for advanced trench gate IGBTs ...
Omura, I., Tanaka, M.
core +2 more sources
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This article presents a Fifteen‐level inverter topology that has a lesser number of switches (12) and can accommodate isolated DC sources. The total harmonic elimination (THD) of the proposed topology using genetic algorithm is within the IEEE 519 standards. Further, the fifteen‐level inverter is implemented in Hardware and firing pulses were generated
Yogesh Joshi +4 more
wiley +1 more source
An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring
Energies, 2019 The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the ...
Zilang Hu +6 more
doaj +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The multisource adaptive fusion CNN‐transformer method proposed in this study can provide theoretical and technical support for fault diagnosis of high‐voltage MCHBI. It has a promising potential for engineering applications. Abstract In high‐voltage applications, the number of cascaded H‐bridge inverter units is large, the failure probability ...
Weiman Yang +4 more
wiley +1 more source
Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
doaj +1 more source
A four‐step control for IGBT switching improvement using an active voltage gate driver
IET Power Electronics, 2022 Gate drivers form an essential interface between the high power transistors and low voltage control circuits in power converters to govern the transistor switching operations and maintain other ancillary functions.
Chen Li +5 more
doaj +1 more source
Utilization of bottom ash for alkali-activated (SI-AL) materials: a review [PDF]
, 2015 In Malaysia, 180 tons/day of solid waste bottom ash are produced by a Tanjung Bin power station, which is one of the four coal power plants in Malaysia.
Abdul Kadir, Aeslina +5 more
core
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a non‐contact method for measuring the turn‐off time of insulated‐gate bipolar transistor (IGBT) devices in modular multilevel converters (MMC) submodules, using the decay of load‐side common‐mode current. The technique leverages existing current‐sensing infrastructure and avoids intrusive modifications, enabling real‐time ...
Jiyun Liu +7 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2019 A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side.
Mengxuan Jiang, Yulei Wang
doaj +1 more source