Results 71 to 80 of about 8,273 (227)

General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules [PDF]

open access: yes, 2016
Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits
Bahman, Amir Sajjad   +2 more
core   +2 more sources

Active Voltage Balancing Control of 9‐Level Multicell‐Based A‐NPC Inverters

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
We present a optimization‐free PWM control for single‐phase 9‐level FC A‐NPC inverters that converts measured current and capacitor voltages into logic equations to both balance FC voltages and generate the commanded levels. By removing objective functions/optimizers, it enables fast, simple implementation, with experiments showing robust performance ...
Kasra Amirsoleymani, Vahid Dargahi
wiley   +1 more source

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim   +2 more
doaj  

Bolts connection technique of bamboo in construction work [PDF]

open access: yes, 2017
The construction industry is increasingly developing and growing rapidly with more advanced technologies. The world timber demand is increasing at a rapid rate but the timber supply is however depleting. It has been found through research that bamboo can
Abdullah, Mohd Sufyan   +6 more
core   +1 more source

Power Converter's IGBT Multi‐State Reliability Analysis for Low Failure Rate Operation

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper proposes a multi‐state reliability analysis for IGBTs in power converters, moving beyond the conventional two‐stage model with a constant failure rate and introduces a multi‐state Markov chain model for voltage source converters under different modulation scenarios.
Qiaohan Su   +3 more
wiley   +1 more source

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

open access: yesFracture and Structural Integrity, 2020
Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang   +3 more
doaj   +1 more source

SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm

open access: yesJournal of Electrical and Computer Engineering, 2021
The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi   +3 more
doaj   +1 more source

High-Voltage Ignition Circuit For Compressed Natural Gas Direct Injection Engine [PDF]

open access: yes, 2007
Ignition system of an internal combustion engine is an important part of the overall engine management system. It is a means to provide enough high-voltage, minimum around 20 kV to form an arc across the gap of a spark plug and to control the ignition ...
Omar, Azimah
core  

Prediction of Short-Circuit-Related Thermal Stress in Aged IGBT Modules [PDF]

open access: yes, 2016
In this paper, the thermal stress on bond wires of aged IGBT modules under short-circuit conditions has been studied with respect to different solder delamination levels.
Bahman, Amir Sajjad   +4 more
core   +2 more sources

Experimental Study of the Fretting Amplitude of the Contact Surface in a PP‐IGBT Module During Power Cycling

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This work investigates the displacement amplitude of the contact surfaces between the Si chip and the Mo emitter plate of a PP‐IGBT module during power cycling on the basis of experimental measurements, as well as the effects of loading conditions such as the load current, switching time and normal load on the displacement amplitude.
Tong An   +5 more
wiley   +1 more source

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