Results 81 to 90 of about 8,273 (227)
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Eletrônica de PotênciaThe application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela +4 more
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Screening study on high power IGBT [PDF]
International Journal for Simulation and Multidisciplinary Design Optimization, 2010 This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications.
Karama M., Rabier F.
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IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes an Uncertainty and Disturbance Estimator (UDE)‐based dual‐loop control for Power Conversion Systems (PCS). Experiments show the UDE controller reduces response time by over 50% compared to PI control, significantly enhancing disturbance rejection against grid and command variations.
Haowen Ren, Xin Cao, Shixin Wang
wiley +1 more source
Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter
Energies, 2017 6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang +4 more
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Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors [PDF]
, 2015 The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and ...
Didenko, S.I. +6 more
core
3D Lumped Thermal Model for Compliant Press‐Pack IGBT Submodule in MMC
IET Power Electronics, Volume 19, Issue 1, January/December 2026.We present a 3D lumped thermal model for compliant press‐pack IGBT submodules in MMCs. The model accounts for double‐sided cooling and thermal coupling, achieving high accuracy and efficiency, making it suitable for real‐time condition monitoring. ABSTRACT The compliant press‐pack IGBT is widely used in modular multilevel converters (MMCs).
Shuguo Gao +5 more
wiley +1 more source
Energies, 2019 The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong +4 more
doaj +1 more source
Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects [PDF]
, 2015 An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and
Castellazzi, Alberto +3 more
core +2 more sources
Development of a Compact Bipolar Voltage Generator to Test HV XLPE Cables With Damped AC Voltage
IET Science, Measurement &Technology, Volume 20, Issue 1, January/December 2026.This paper presents a compact bipolar HVDC generator that employs bidirectional rectifier switches instead of conventional diodes in the voltage multiplier, enabling selectable output polarities. The proposed generator provides a bipolar charging manner for damped alternating current testing of HV cross‐linked polyethylene cables to mitigate the space ...
Junbai Chen +4 more
wiley +1 more source