Results 1 to 10 of about 519 (175)
IEEE Open Journal of Industry ApplicationsIncreasing requirements for high switching frequency and high power density have driven the development of gallium nitride power transistors. Among them, some GaN transistors feature a noninsulating gate, such as gate injection transistors and Schottky ...
Xiaomeng Geng +4 more
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Applied Sciences, 2021 The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was
Adrian Pietruszka +4 more
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Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
Energies, 2023 Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary +3 more
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Long Short-Term Memory Mixture Density Network for Remaining Useful Life Prediction of IGBTs
TechnologiesA reliable prediction of the remaining useful life of critical electronic components, such as insulated gate bipolar transistors, is necessary for preventing failures in many industrial applications.
Yarens J. Cruz +2 more
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Energies, 2017 This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems.
Xiaofeng Ding +5 more
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IEEE Access, 2020 This paper proposes open fault diagnosis and tolerance control methods for grid-connected hybrid active neutral-point-clamped (ANPC) inverters with optimized carrier-based pulse width modulation.
Ye-Ji Kim +3 more
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Sensors, 2019 With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents.
Chaoqun Jiao +4 more
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Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules
MicromachinesWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
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Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
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New Technology and Development Trend of Insulated Gate Bipolar Transistors
Kongzhi Yu Xinxi Jishu, 2017 IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present.
ZHANG Jinping +5 more
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