Results 91 to 100 of about 519 (175)

High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation. [PDF]

Materials (Basel), 2023
El Ghazi H, En-Nadir R, Jorio A, Basyooni-M Kabatas MA.   +3 more
europepmc   +1 more source

Ionomer-Based Ion-Sensitive Field-Effect Transistor for Lithium Ion Sensing. [PDF]

ACS Omega
Colak TO, Kurt M, Yaman E, Demirci Sankir N, Sankir M.   +4 more
europepmc   +1 more source

Reduced-order linearized dynamic model for induction motor-driven centrifugal fan-pump system. [PDF]

Sci Rep
Turkeri C, Kiselychnyk O, Ekinci S, Izci D, Bajaj M, Rubanenko O.   +5 more
europepmc   +1 more source

Design and Implementation of universal converter using ANN controller. [PDF]

Sci Rep
Suresh K, Parimalasundar E, Arunraja A, Ellappan V, Ware ET.   +4 more
europepmc   +1 more source

Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications. [PDF]

Nat Electron
Kumar AS, Dalcanale S, Uren MJ, Pomeroy JW, Smith MD, Parke JA, Howell RS, Kuball M.   +7 more
europepmc   +1 more source

Three-Phase Motor Inverter and Current Sensing GaN Power IC. [PDF]

Sensors (Basel), 2023
Mönch S, Reiner R, Basler M, Grieshaber D, Benkhelifa F, Waltereit P, Quay R.   +6 more
europepmc   +1 more source

Neural vs Neuromorphic Interfaces: Where Are We Standing? [PDF]

Chem Rev
Rana D, Babushkina N, Gini M, Flores Cáceres A, Li H, Maybeck V, Criscuolo V, Mayer D, Ienca M, Musall S, Rincon Montes V, Offenhäusser A, Santoro F.   +12 more
europepmc   +1 more source

Performer-KAN-Based Failure Prediction for IGBT with BO-CEEMDAN. [PDF]

Micromachines (Basel)
Xiao Y, Wang F.
europepmc   +1 more source

Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure. [PDF]

Micromachines (Basel)
Ye G, Yao Z.
europepmc   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source