Results 141 to 150 of about 519 (175)
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Recent advances in insulated gate bipolar transistor technology
IEEE Transactions on Industry Applications, 1990Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area
H. Yilmaz +4 more
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Latch-up prevention in insulated gate bipolar transistors
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002A technique for improving the latch-up capability of the LIGBT (lateral insulated-gate bipolar transistor) is proposed. A shallow trench at the cathode is used to reduce the p-base resistance and eliminate the p-well resistance, and consequently prevent the device from latching-up at low voltages.
A. Nezar, P.K.T. Mok, C.A.T. Salama
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Lateral Unidirectional Bipolar-Type Insulated-Gate Transistors
Japanese Journal of Applied Physics, 1983A lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) is proposed which has a lateral p +-n-n + (or n +-p-p +) diode structure on the top of the insulator and in which the insulated gate is aligned in the n (or p) region and the thickness of the n (or p ...
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Analysis of double trench insulated gate bipolar transistor
Solid-State Electronics, 1995Abstract Numerical simulation is used to analyse a novel Double Trench Insulated Gate Bipolar Transistor (DT-IGBT) structure. It has been found that the DT-IGBT structure can be used to achieve a switching loss similar to that of the power MOSFET transistors.
Q. Huang, G.A.J. Amaratunga
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A dynamic n-buffer insulated gate bipolar transistor
Solid-State Electronics, 2001Abstract A novel dynamic n-buffer insulated gate bipolar transistor (DB-IGBT) with double gates is proposed and analysed in detail by using two-dimensional numerical simulations. It is found that the turn-off energy loss of this device is reduced and the short-circuit performance is improved significantly compared to the optimised conventional IGBT ...
S Huang +3 more
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Series Connection of Insulated Gate Bipolar Transistors (IGBTs)
IEEE Transactions on Power Electronics, 2012High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
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Real Time Simulation of Insulated Gate Bipolar Transistor
Applied Mechanics and Materials, 2013The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example.
Xiao Jun Ma +3 more
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Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
Materials Science Forum, 2006The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness
S. Balachandran +2 more
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A novel high performance insulated gate bipolar transistor
Solid-State Electronics, 2006Abstract For the first time, a new concept of LDE-IGBT (local drift-region enhanced IGBT) is proposed and verified by two-dimensional (2D) device-circuit mixed simulations. The structure of the proposed device is almost identical to that of the conventional IGBT, except for an additional n + plugged region under the gate contact. The proposed device
Fei Zhang, Lina Shi, Chengfang Li
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Materials Science Forum, 2005
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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