Results 21 to 30 of about 519 (175)

Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters

Mokslas: Lietuvos Ateitis, 2010
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj   +1 more source

A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules

IET Power Electronics, 2023
Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring.
Wuyu Zhang, Lei Qi, Xiangyu Zhang, Bing Ji, Xiang Cui   +4 more
doaj   +1 more source

Investigation and improvement of single-event burn-out in 4H-SiC trench insulated gate bipolar transistors

Results in Physics, 2021
In this paper, the triggering process for single-event burnout (SEB) in conventional 4H-SiC trench insulated gate bipolar transistors (C-TIGBTs) is described. Furthermore, SEB is studied for both a conventional structure and a new structure.
Yan-juan Liu, Ying Wang, Yu-peng Wang, Le-ning Wang   +3 more
doaj   +1 more source

Design, Analysis and Experimental Verification of the Self-Resonant Inverter for Induction Heating Crucible Melting Furnace Based on IGBTs Connected in Parallel

Electricity, 2021
The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial ...
Borislav Dimitrov, Khaled Hayatleh, Steve Barker, Gordana Collier   +3 more
doaj   +1 more source

Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors

Case Studies in Thermal Engineering, 2019
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du, Qiuya Guo, Ziwei Ouyang, Kexin Wei, William Gerard Hurley   +4 more
doaj   +1 more source

Open circuit fault diagnosis for a five-level neutral point clamped inverter in a grid-connected photovoltaic system with hybrid energy storage system

Electrical engineering & Electromechanics, 2023
Introduction. Recently, the number of high and medium voltage applications has increased dramatically. The connection between these different applications requires series-parallel combinations of power semiconductors.
A. Abdellah, M. Larbi, D. Toumi
doaj   +1 more source

Time-Variant Reliability Optimization for Stress Balance in Press-Pack Insulated Gate Bipolar Transistors

IEEE Access, 2023
Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li, Tongguang Yang, Xinglin Liu, Jingyi Zhong, Jiaxin Mo, Han Zhou, Zhongkun Xiao   +6 more
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Multi-mode kernel principal component analysis–based incipient fault detection for pulse width modulated inverter of China Railway High-speed 5

Advances in Mechanical Engineering, 2017
This article deals with incipient fault of insulated-gate bipolar transistors to improve the safety of traction systems of China Railway High-speed 5. Combining with the pulse width modulated strategy which makes signals variate periodically, the multi ...
Hongtian Chen, Bin Jiang, Ningyun Lu, Zehui Mao   +3 more
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Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

IEEE Access, 2021
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu, Tianlei Jiao, Diganta Das, Ijaz Haider Naqvi, Michael Pecht   +4 more
doaj   +1 more source

Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Micromachines, 2023
Recent advancements in power electronic switches provide effective control and operational stability of power grid systems. Junction temperature is a crucial parameter of power-switching semiconductor devices, which needs monitoring to facilitate ...
Ridwanullahi Isa, Jawad Mirza, Salman Ghafoor, Mohammed Zahed Mustafa Khan, Khurram Karim Qureshi   +4 more
doaj   +1 more source