Results 31 to 40 of about 519 (175)

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

open access: yesВестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov   +2 more
doaj   +1 more source

Adjoint method for the optimization of insulated gate bipolar transistors

open access: yesAIP Advances, 2019
A mathematical algorithm is presented for the computation of optimum doping profiles that maximize the breakdown voltage and on-state current in insulated gate bipolar transistors (IGBT).
C. Zhu, P. Andrei
doaj   +1 more source

Real-Time HIL Emulation of DRM With Machine Learning Accelerated WBG Device Models

open access: yesIEEE Open Journal of Power Electronics, 2023
The proliferation of artificial intelligence (AI) has opened up new avenues for the modeling of power electronics with ultra-fast transient responses, such as wide-bandgap (WBG) devices.
Songyang Zhang   +2 more
doaj   +1 more source

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

open access: yesTransport and Telecommunication, 2015
The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Krainyukov Alexander, Kutev Valery
doaj   +1 more source

GA-LSTM-Based Degradation Prediction for IGBTs in Power Electronic Systems

open access: yesEnergies
The reliability and lifetime of insulated gate bipolar transistors (IGBTs) are critical to ensuring the stability and safety of power electronic systems.
Yunfeng Qiu, Zehong Li, Shan Tian
doaj   +1 more source

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

open access: yesMicromachines, 2020
As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the
Immanuel N. Jiya, Rupert Gouws
doaj   +1 more source

Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]

open access: yes9th International Seminar on Power Semiconductors (ISPS 2008), 2008
Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
openaire   +1 more source

Optimised temperature fluctuation control strategy for lifetime improvement in aircraft electrical power distribution system

open access: yesIET Electrical Systems in Transportation, 2022
As a power electronic converter with bidirectional energy transmission, the Dual Active Bridge (DAB) has a broad application prospect in the electrical power distribution system of hybrid‐electric flight.
Hao Yan   +3 more
doaj   +1 more source

Study of quasi-stationary operating modes of a traction drive based on a synchronous-reactive motor with permanent magnets

open access: yesВісник Національного технічного університету "ХПÌ". Енергетика: надійність та енергоефективність
The paper analyzes quasi-stationary processes in traction electric drives of subway cars using mathematical models of synchronous jet motors with permanent magnets.
Олександр Миколайович Штомпель
doaj   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy