Results 81 to 90 of about 519 (175)

Computational‐Efficient IGBT and Diode Thermal Modelling Methodology With High Accuracy

IET Power Electronics
In an industrial context where high reliability is an increasingly important requirement, thermal modelling of power semiconductors becomes necessary for diagnostics and prognostics.
Ciro Alosa, Abraham M. Alcaide, Alejandro Stowhas‐Villa, Jhonattan G. Berger, Fabio Immovilli, Christian A. Rojas, Ricardo Lizana F, Giampaolo Buticchi, Samir Kouro, Jose I. Leon   +9 more
doaj   +1 more source

A Device for Investigating the AC Characteristics of Metal Oxide Varistors

IET Power Electronics
In recent years, the AC characteristics of metal oxide varistors have attracted growing research interest. This study presents an insulated‐gate bipolar transistor‐based device designed to address the limitations of existing power supply systems, which ...
Xinyan Xiao, Lanjun Yang, Yonggang Yue
doaj   +1 more source

Multipoint Thermal Sensing System for Power Semiconductor Devices Utilizing Fiber Bragg Gratings

Applied Sciences
This study investigates the feasibility of using fiber Bragg grating (FBG) sensors for multipoint thermal monitoring of several power semiconductor devices (PSDs), such as insulated gate bipolar transistors (IGBTs), and rectifiers assembled on a common ...
Ridwanullahi Isa, Naveed Iqbal, Mohammad Abido, Jawad Mirza, Khurram Karim Qureshi   +4 more
doaj   +1 more source

Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 1994
A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and ...
Mitter, C. S., Hefner, A. R., Chen, D. Y., Lee, F. C.   +3 more
openaire   +1 more source

A Novel GRU-Augmented Time-Frequency Estimator for IGBT Remaining Useful Life Prediction

IEEE Access
Aging-induced failure of Insulated Gate Bipolar Transistors (IGBTs) significantly restricts the reliability of power electronic systems. Accurate and efficient prediction of IGBT Remaining Useful Life (RUL) is critical for proactive risk mitigation and ...
Yuankuang Li, Baohua Tan, Yingjie Zhang, Shuo Wang, Bolin Lian, Yuan Li, Zongming Tan   +6 more
doaj   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]

Micromachines (Basel), 2023
Wang Z, Yang C, Huang X.
europepmc   +1 more source

A Quasi-Resonant System for High-Frequency Trans-Spinal Magnetic Stimulation (HF-TSMS). [PDF]

IEEE Trans Biomed Eng
Marturano F, Straney D, Colella M, Chen YI, Ay I, Bonmassar G.   +5 more
europepmc   +1 more source

Asymmetric modular pulse synthesizer as a high-fidelity solution for transcranial magnetic stimulation with practically any pulse shape. [PDF]

Brain Stimul
Zhang J, Peterchev AV, Goetz SM.
europepmc   +1 more source