Results 1 to 10 of about 157,312 (300)
FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]
Journal of Engineering Science (Chişinău), 2019 The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
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High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
Functional Diamond, 2023 The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen +8 more
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Study of Capacitor & Diode Aging effects on Output Ripple in Voltage Regulators and Prognostic Detection of Failure [PDF]
International Journal of Electronics and Telecommunications, 2022 Objectives: To design and simulate a buck converter and detector circuit which can prognostically indicate the power supply failure. Failure of Aluminium Electrolytic Capacitor (AEC) is considered as the parameter causing the power supply failure.
Preethi Sharma K, T. Vijayakumar
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Sensors, 2023 In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity.
Dibyendu Chowdhury +7 more
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Rectal and Bladder Dose Measurements in the Intracavitary Applications of Cervical Cancer Treatment with HDR Afterloading System: Comparison of TPS Data with MOSFET Detector [PDF]
Journal of Biomedical Physics and Engineering, 2020 Background: Intracavitary brachytherapy plays a major role in management of cervical carcinoma. Assessment of dose received by OAR’s therefore becomes crucial for the estimation of radiation toxicities in HDR brachytherapy.
N Singh +6 more
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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Protection of battery-powered devices against accidental swap of power supply connections.
Российский технологический журнал, 2022 Objectives. Battery-powered devices (e.g., wireless sensors, pacemakers, watches and other wrist-worn devices, virtual reality glasses, unmanned aerial vehicles, robots, pyrometers, cars, DC/DC converters, etc.) are widely used today.
V. P. Babenko, V. K. Bityukov
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IEEE transactions on industry applications, 2020 Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications.
S. Mocevic +6 more
semanticscholar +1 more source
Kontrol Motor Induksi 1 Fasa Menggunakan Raspberry Pi
Jurnal Teknik Elektro, 2020 Motor induksi paling banyak digunakan pada peralatan industri maupun pada peralatan rumah tangga, karena harganya relatif murah dan perawatannya juga lebih mudah, jika dibandingkan dengan jenis motor lainnya.
Junaidi Asrul +5 more
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On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
IEEE Transactions on Industrial Electronics, 2017 Woongje Sung
exaly +2 more sources