Results 91 to 100 of about 194,360 (332)

Spikoder: Dual‐Mode Graphene Neuron Circuit for Hardware Intelligence

Advanced Intelligent Systems, EarlyView.
Spikoder, a graphene leaky integrate‐and‐fire circuit that operates as an encoder and a neuron in a spiking neural network (SNN), is introduced. A Spikoder‐driven double‐layer SNN shows an accuracy of 97.37% for the classification of the Modified National Institute of Standards and Technology dataset, demonstrating its potential as a key building block
Kannan Udaya Mohanan, Seyed Mehdi Sattari‐Esfahlan, Eou‐Sik Cho, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics

IET Power Electronics
Split‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj   +1 more source

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

Sensors, 2017
A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi, Park Chul Woo, Jung-Yeol Yeom, Changhan Yoon   +3 more
doaj   +1 more source

MOSFET analog memory circuit achieves long duration signal storage [PDF]

, 1966
Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches ...

core   +1 more source

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

, 2010
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices
Dzurak, Andrew S., Hamilton, Alex R., Lai, Nai-Shyan, Tan, Kuan Y., van Beveren, Laurens H. Willems   +4 more
core   +2 more sources

Neonatal Respiration Monitoring System with Synchronized Oxygen Supply and Machine Learning‐Based Breathing Classification

Advanced Intelligent Systems, EarlyView.
The study presents a low‐cost, noninvasive system for real‐time neonatal respiratory monitoring. A flexible, screen‐printed sensor patch captures chest movements with high sensitivity and minimal drift. Combined with machine learning, the system accurately detects breathing patterns and offers a practical solution for neonatal care in low‐resource ...
Gitansh Verma, Eugen Koch, Andreas Dietzel, Shrutidhara Sarma   +3 more
wiley   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

Advanced Intelligent Systems, EarlyView.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze, Bhavani Yalagala, Naveen Kumar, Mostafa Elsayed, Meraj Ahmad, Robert Graham, Vihar Georgiev, Hadi Heidari, Martin Weides   +8 more
wiley   +1 more source

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

IEEE Journal of the Electron Devices Society, 2018
In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs)
Faisal Bashir, Abdullah G. Alharbi, Sajad A. Loan   +2 more
doaj   +1 more source

A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design [PDF]

, 2013
This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors ...
Cicekoglu, O., Herencsar, N., Metin, B.
core   +1 more source

Machine Learning‐Based Standard Compact Model Binning Parameter Extraction Methodology for Integrated Circuit Design of Next‐Generation Semiconductor Devices

Advanced Intelligent Systems, EarlyView.
This study presents a neural network‐based methodology for Berkeley Short‐Channel IGFET Model–Common Multi‐Gate parameter extraction of gate‐all‐around field effect transistors, integrating binning adaptive sampling and transformer neural networks to efficiently capture current–voltage and capacitance–voltage characteristics.
Jaeweon Kang, Johyeon Kim, Sueyeon Kim, Hyunbo Cho, Jongwook Jeon   +4 more
wiley   +1 more source