Results 91 to 100 of about 157,312 (300)
Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
Functional DiamondExtensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
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Advanced Electronic Materials, EarlyView.We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun +10 more
wiley +1 more source
Sensors, 2017 A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi +3 more
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Advanced Electronic Materials, EarlyView.ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash +4 more
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A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics
IET Power ElectronicsSplit‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
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Compact Modeling for a Double Gate MOSFET [PDF]
, 2009 MOSFETs (metal-oxide-silicon field-effect transistors) are an integral part of modern electronics. Improved designs are currently under investigation, and one that is promising is the double gate MOSFET.
Ahmed, Saleem +8 more
core
Advanced Electronic Materials, EarlyView.This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
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Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications
IEEE Journal of the Electron Devices Society, 2018 In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs)
Faisal Bashir +2 more
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Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
, 2010 We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices
Dzurak, Andrew S. +4 more
core +2 more sources
Flexible Memory: Progress, Challenges, and Opportunities
Advanced Intelligent Discovery, EarlyView.Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source