Results 111 to 120 of about 194,360 (332)
Gongneng cailiao yu qijian xuebaoIn this paper, the carrier transport characteristics of a high-performance SiGe-on-insulator p-channel metal-oxide-semiconductor field-effect transistor (SiGe-OI pMOSFET) are systematically investigated using a back-gate modulation method.
Zhengyang CHEN +2 more
doaj +1 more source
Heat Transfer, EarlyView.ABSTRACT This study investigates the thermal performance of innovative biphilic boiling surfaces designed for CPU cooling applications using a two‐phase closed thermosyphon (TPCT) system. The surfaces were fabricated by applying composite coatings—comprising epoxy resin and diatomite particles functionalized with APTES and PFOTS silanes— onto Al1050 ...
José Pereira +3 more
wiley +1 more source
Organic neuromorphic electronics powering intelligent sensory and edge computing systems
InfoMat, EarlyView.Organic electronic materials are promising candidates for neuromorphic sensing applications, including chemical, physical, visual, and multimodal sensing, owing to their mechanical softness, biocompatibility, and intrinsic ionic–electronic coupling.
Seungjun Woo +5 more
wiley +1 more source
A Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIM [PDF]
, 2023 Alessandro Borghese +4 more
openalex +1 more source
A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI
Magnetic Resonance in Medicine, EarlyView.ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding +7 more
wiley +1 more source
physica status solidi (b), EarlyView.Schematic of a metal‐oxide‐semiconductor field‐effect transistor at pinch‐off together with the channel potential. We revisit the problem of the potential distribution in an inversion channel field effect transistor (metal–oxide‐semiconductor field‐effect transistor) within the gradual channel approximation.
Marius Grundmann
wiley +1 more source
Solid state switch provides high input-to-output isolation [PDF]
, 1970 Switch uses a combination of N-channel and P-channel Metal Oxide Semiconductor Field Effect Transistors /MOSFET/ to obtain a normally open switch with no power applied.
Magee, R. L., Trowbridge, L. E.
core +1 more source
The Investigation of graded channel effect on Analog/Linearity Parameter Analysis of junctionless surrounded gate graded channel MOSFET [PDF]
, 2023 Sarita Misra +3 more
openalex +1 more source
Advances in Gate Dielectrics for 2D Electronics
physica status solidi (RRL) – Rapid Research Letters, EarlyView.This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung +2 more
wiley +1 more source