Results 131 to 140 of about 157,312 (300)

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

Advanced Science, Volume 13, Issue 16, 18 March 2026.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang, Chengqian Cui, Xiaoli Jing, Rui You, Mingjun Zhang, Jing Xu   +5 more
wiley   +1 more source

Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

Advanced Science, Volume 13, Issue 13, 3 March 2026.
A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo, Sunjae Kim, Ji‐Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang, Jinyoung Hwang   +5 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

The Rise of Organic Electrochemical Transistors for Brain‐Inspired Neuromorphic Computing

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
This review provides a comprehensive overview of organic electrochemical transistors (OECTs) for brain‐inspired computing. From fundamental device physics and material engineering to system‐level integration, it highlights OECTs' unique mixed ionic‐electronic conduction capabilities.
Heejin Kim, Hyunhak Jeong, Gunuk Wang
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers (Adv. Electron. Mater. 5/2026)

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
Double‐Gate MOSFETs The cover art illustrates sub‐5 nm double‐gate metal‐oxide‐semiconductor field‐effect transistors utilizing 2D silicon arsenide monolayers as channel materials. These transistors exhibit superior performance and energy efficiency, meeting the ITRS 2028 requirements.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Spikoder: Dual‐Mode Graphene Neuron Circuit for Hardware Intelligence

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Spikoder, a graphene leaky integrate‐and‐fire circuit that operates as an encoder and a neuron in a spiking neural network (SNN), is introduced. A Spikoder‐driven double‐layer SNN shows an accuracy of 97.37% for the classification of the Modified National Institute of Standards and Technology dataset, demonstrating its potential as a key building block
Kannan Udaya Mohanan, Seyed Mehdi Sattari‐Esfahlan, Eou‐Sik Cho, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

End-to-end test and MOSFET in vivo skin dosimetry for 192Ir high-dose-rate brachytherapy of chronic psoriasis

Journal of Contemporary Brachytherapy, 2019
Lalida Tuntipumiamorn, Pitchayut Nakkrasae, Sansanee Kongkum, Pittaya Dankulchai   +3 more
doaj   +1 more source

A temperature dependent analytical model & performance evaluation of triple-material dielectric-pocket gate-all-around MOSFET

Discover Applied Sciences
In current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging
Neeraj Gupta, Rashmi Gupta, Rekha Yadav, Prashant Kumar, Lalit Rai   +4 more
doaj   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source