Results 131 to 140 of about 194,360 (332)
Advanced Materials, Volume 38, Issue 7, 2 February 2026.Super‐steep subthreshold swing (SS) below 60 mV dec−1 is demonstrated in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppressed the Boltzmann thermal tail, while high‐k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is
Seyoung Oh +13 more
wiley +1 more source
Device-Circuit Level Simulation Study of Three Inputs Complex Logic Gate Designed Using Nano-MOSFETs
Applications of Modelling and Simulation, 2019 Simulation study on silicon-based nano-MOSFETs logic circuits is needed to add more knowledge on the nanoscale circuit performance. Therefore, in this paper, simulation study is carried out on three inputs complex logic gate transistor circuits with four
Ooi Chek Yee
doaj
TWO-DIMENSIONAL COMPUTER SIMULATION OF HOT CARRIER DEGRADATION IN N. MOSFETs
, 1988 M. Garrigues +5 more
openalex +2 more sources
4H‐SiC trench MOSFET with integrated fast recovery MPS diode [PDF]
, 2017 Tianxiang Dai +6 more
openalex +1 more source
Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era
Advanced Materials, Volume 38, Issue 7, 2 February 2026.In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu +3 more
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee +7 more
wiley +1 more source
Nonisolated High Step‐Up DC‐DC Ćuk Converter Based on Coupled Inductors
International Journal of Circuit Theory and Applications, Volume 54, Issue 2, Page 874-887, February 2026.A nonisolated high step‐up DC‐DC Ćuk converter based on coupled inductors and voltage multiplier cell (VMCs) is proposed and thoroughly assessed. ABSTRACT This work presents a nonisolated high step‐up DC‐DC Ćuk converter, specifically designed for nanogrid applications.
Manuel de Oliveira Vasconcelos Júnior +7 more
wiley +1 more source
III-V Mosfet as Advance Low Dimensional Transistor
, 2014 Iosr Journals, E.Subhasri P.Deepika
openalex +1 more source