Results 141 to 150 of about 194,360 (332)
Discover Applied SciencesIn current article, an analytical model of a Triple-Material Dielectric-Pocket Gate-All-Around (TM-DP-GAA) MOSFET has been presented for elevated temperature conditions. The numerical model of surface potential has been developed for temperatures ranging
Neeraj Gupta +4 more
doaj +1 more source
Nano-ballistic saturation Velocity modelling to enhance circuit performances of Nano-Mosfet [PDF]
, 2010 Ismail Saad
openalex
Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions
Proceedings of the IEEE, 1974 R. Dennard +5 more
semanticscholar +1 more source
Research on High-power Full SiC Converter
机车电传动, 2018 In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing +5 more
doaj
The Analysis and Research of the Integrated, 30 A MOSFET Gate Driver Dedicated to High-Frequency Applications [PDF]
Piotr LEGUTKO
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High frequency noise in deep-submicrometer silicon mosfets [PDF]
, 2011 Haibin Su
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The Trench Power MOSFET: Part I—History, Technology, and Prospects
IEEE Transactions on Electron Devices, 2017 Richard K. Williams +5 more
semanticscholar +1 more source
Analysis of MOSFET Transfer Characteristics Shear [PDF]
, 2017 В.Е. Драч, В.Е. Драч
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Development of statistical model for baseband MOSFETs [PDF]
, 2008 Guan Hui Lim
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High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET. [PDF]
Sci RepLodhi MEA +4 more
europepmc +1 more source