High-frequency submicrosecond electroporator
Biotechnology & Biotechnological Equipment, 2016 In this work, we present a novel electroporator which is capable of generating single and bursts of high power (3 kV, 60 A) square wave pulses of variable duration (100 ns to 1 ms) with predefined repetition frequency (1 Hz to 3.5 MHz).
Vitalij Novickij +6 more
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In vivo dose measurement using TLDs and MOSFET dosimeters for cardiac radiosurgery. [PDF]
, 2012 In vivo measurements were made of the dose delivered to animal models in an effort to develop a method for treating cardiac arrhythmia using radiation. This treatment would replace RF energy (currently used to create cardiac scar) with ionizing radiation.
Blanck, Oliver +6 more
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The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
, 2010 The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M. +7 more
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Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
Nanotechnology Reviews, 2017 The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A. +1 more
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Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
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Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
Micromachines, 2020 Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source ...
Kin P. Cheung +2 more
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High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
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A 2-MHz 2-kW voltage-source inverter for low-temperature plasma generators: implementation of fast switching with a third-order resonant circuit [PDF]
, 1999 This paper presents a specially designed third-order resonant circuit intended to achieve fast switching operation for a voltage-source series-resonant inverter using four MOSFETs.
Akagi, Hirofumi, Fujita, Hideaki
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DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods.
F. I. Bukashev, A. R. Shakhmaeva
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Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
, 2006 We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised.
Alessandro Calderoni +16 more
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