Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and delta-doped channels [PDF]
, 1999 A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub 0.1-μm MOSFET architectures with epitaxial channels and delta doping is presented.
Asenov, A., Saini, S.
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Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
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Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
Nanotechnology Reviews, 2017 The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A. +1 more
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Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
Micromachines, 2020 Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source ...
Kin P. Cheung +2 more
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High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
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Exploiting the dynamic properties of FET-based chemical sensors [PDF]
, 1989 After a long period of mainly static application of ISFETS, other more sophisticated applications are being developed, based on the exploitation of the dynamic properties of ISFETS. Examples are the use of flow-through cells with sample injection and the
Bergveld, P.
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DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods.
F. I. Bukashev, A. R. Shakhmaeva
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Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
, 2006 We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised.
Alessandro Calderoni +16 more
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In vivo dose measurement using TLDs and MOSFET dosimeters for cardiac radiosurgery. [PDF]
, 2012 In vivo measurements were made of the dose delivered to animal models in an effort to develop a method for treating cardiac arrhythmia using radiation. This treatment would replace RF energy (currently used to create cardiac scar) with ionizing radiation.
Blanck, Oliver +6 more
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An Investigation of Reliability and Life Time Prediction for Power MOSFET Using Electronically and Statistical Technique [PDF]
Engineering and Technology Journal, 2013 This work is aimed to estimate the life time of the MOSFET power transistor through an empirical implementation work merged with statistical applications.
Abdul-hasan Abdallah Kadhim +2 more
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