Results 41 to 50 of about 157,312 (300)
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj +1 more source
Current-voltage Characteristics of Molecular Conductors: Two versus Three Terminal
, 2002 This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a standard
Damle, Prashant +3 more
core +3 more sources
The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
, 2010 The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M. +7 more
core +1 more source
IEEE Access, 2023 We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi +5 more
doaj +1 more source
Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET
Scientific Reports, 2017 Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential.
S. Dutta +4 more
semanticscholar +1 more source
Verification of angular dependence in MOSFET detector
Brazilian Journal of Radiation Sciences, 2019 In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-
Clayton Henrique de Souza
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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Micromachines, 2021 This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static ...
Chia-Yuan Chen +4 more
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Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li +5 more
wiley +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect.
I. Yu. Lovshenko +2 more
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