Results 41 to 50 of about 194,360 (332)
The consequences of the application of a floating gate on d.c.-MISFET characteristics [PDF]
, 1984 In the literature the influence of the conducting layer, sometimes called a floating gate, upon d.c.-MISFET characteristics is ignored or only treated in a phenomenological way. Our intentions in this paper are to present a study of the consequences of a
Bergveld, P., Voorthuyzen, J.A.
core +7 more sources
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Energies, 2021 A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation.
Jongwoon Yoon, Jaeyeop Na, Kwangsoo Kim
doaj +1 more source
Current-voltage Characteristics of Molecular Conductors: Two versus Three Terminal
, 2002 This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a standard
Damle, Prashant +3 more
core +3 more sources
Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and delta-doped channels [PDF]
, 1999 A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub 0.1-μm MOSFET architectures with epitaxial channels and delta doping is presented.
Asenov, A., Saini, S.
core +1 more source
An Investigation of Reliability and Life Time Prediction for Power MOSFET Using Electronically and Statistical Technique [PDF]
Engineering and Technology Journal, 2013 This work is aimed to estimate the life time of the MOSFET power transistor through an empirical implementation work merged with statistical applications.
Abdul-hasan Abdallah Kadhim +2 more
doaj +1 more source
IEEE Access, 2023 We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi +5 more
doaj +1 more source
UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]
, 2005 Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Asenov, A. +4 more
core +1 more source
Verification of angular dependence in MOSFET detector
Brazilian Journal of Radiation Sciences, 2019 In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-
Clayton Henrique de Souza
doaj +1 more source
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2020 The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect.
I. Yu. Lovshenko +2 more
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Printed Interconnects for Heterogeneous Systems Integration on Flexible Substrates
Advanced Materials Technologies, Volume 10, Issue 6, March 18, 2025.Key components (sensors, energy devices, communication devices, computing chips, and interconnects) of flexible hybrid electronic (FHE) system connected via conductive printed metal tracks. The figure in the insets shows out‐of‐plane printed interconnects providing opportunities for lithography‐free formation of VIAs, in‐plane access of UTCs pads, and ...
Abhishek Singh Dahiya +3 more
wiley +1 more source