Results 51 to 60 of about 157,312 (300)

Nanowire Zinc Oxide MOSFET Pressure Sensor [PDF]

, 2014
Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated
Clavijo, William
core   +1 more source

Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing

, 2009
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances.
Agarwal S. C., Amasha S., Ashoori R. C., Cohen J. D., Drndić M., Drndić M., Elzerman J. M., Field M., Fritzsche H., Fujisawa T., Gustavsson S., Kastner M. A., Mentzel T. S., Orenstein J., Petta J. R., Ralls K. S., Robertson J., Schaller R. D., Senturia S. D., Street R. A., Tiedje T.   +20 more
core   +1 more source

An electret-based pressure sensitive MOS transistor [PDF]

, 1988
The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and
Bergveld, P., Voorthuyzen, J.A.
core   +3 more sources

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source

Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban

Jurnal Nasional Teknik Elektro dan Teknologi Informasi, 2017
The purpose of this paper is to fabricate a humidity sensor from organic semiconductor and to understand the effect of the transistor`s structure on the sensitivity of humidity sensor.
Fadliondi, Budiyanto
doaj   +1 more source

Applications of combined MOSFET-IGBT power leg with reduced switching losses [PDF]

, 2008
This paper discusses power legs built upon the combination of a MOSFET and an IGBT. The suggested combined use of those different switches is intended to be applied in PWM controlled single and three phase inverters.
Marinov, Angel S, Valchev, Vencislav C, Van den Bossche, Alex   +2 more
core  

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation [PDF]

, 2005
Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs.
Asenov, A., Brown, A.R., Cheng, B., Roy, S., Samsudin, K.   +4 more
core   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

Voltage to frequency converter Patent [PDF]

, 1971
Voltage controlled, variable frequency relaxation oscillator with MOSFET variable current ...
Lokerson, D. C.
core   +1 more source

Accelerating Discovery to Deployment: Argonne's Materials Engineering Research Facility (MERF) and Its Role in Scaling Materials Technologies for Water and Resource Solutions

Advanced Materials Technologies, EarlyView.
In this Perspective, we highlight the processing science and scale‐up capabilities of the Materials Engineering Research Facility (MERF) at the U.S. Department of Energy's Argonne National Laboratory, with an emphasis on practical solutions for sustainable water and critical resource recovery. We demonstrate how national laboratories bridge fundamental
Yuepeng Zhang, Bratin Sengupta, Xiaoao Shi, Haihui Pu, Jeffrey W. Elam, Gregory K. Krumdick, Jessica Durham Macholz, Allison Bennett Irion, Junhong Chen, Seth B. Darling   +9 more
wiley   +1 more source