Results 61 to 70 of about 194,360 (332)
Advanced Science, EarlyView.Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun +9 more
wiley +1 more source
SN Applied Sciences, 2023 Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications.
Sarita Misra +3 more
doaj +1 more source
IEEE Access, 2023 This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
doaj +1 more source
Reducing switching losses through MOSFET-IGBT combination [PDF]
, 2008 This paper introduces a configuration aimed at switching losses reduction trough a power leg constructed by combining a MOSFET and an IGBT. The combined use of these different switches leads to the turn-on losses reduction trough the use of the faster ...
Marinov, Angel +2 more
core
Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing
, 2009 We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances.
Agarwal S. C. +20 more
core +1 more source
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]
, 2019 The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M +6 more
core +1 more source
Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing
Advanced Science, EarlyView.This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang +5 more
wiley +1 more source
Voltage to frequency converter Patent [PDF]
, 1971 Voltage controlled, variable frequency relaxation oscillator with MOSFET variable current ...
Lokerson, D. C.
core +1 more source
Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]
, 2017 A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney +1 more
core +3 more sources
Advanced Science, EarlyView.A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo +5 more
wiley +1 more source