Results 81 to 90 of about 194,360 (332)

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Compact Modeling for a Double Gate MOSFET [PDF]

, 2009
MOSFETs (metal-oxide-silicon field-effect transistors) are an integral part of modern electronics. Improved designs are currently under investigation, and one that is promising is the double gate MOSFET.
Ahmed, Saleem, Breward, Chris, Crowdy, Darren, Cumberbatch, Ellis, Davis, Anthony, Fehribach, Joseph D., Grigsby, Mike, Hall, Cameron, Smith, Stefan Llewellyn   +8 more
core  

Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications [PDF]

, 2007
No abstract ...
Asenov, A., Droopad, R., Hill, R.J.W., Kalna, K., Long, A.R., Moran, D.A.J., Passlack, M., Thayne, I.G., Wilson, J.A.   +8 more
core   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Self‐Driving Laboratory Optimizes the Lower Critical Solution Temperature of Thermoresponsive Polymers

Advanced Intelligent Discovery, EarlyView.
A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley   +1 more source

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

, 2011
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and
Constandinou, TG, Georgiou, P, Liu, Y, Prodromakis, T, Toumazou, C   +4 more
core   +1 more source

Temperature‐Tunable Cholesteric Liquid Crystal Optical Combiners for Extended Reality Applications

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
Recent advancements in extended reality highlight their potential to enhance traditional displays like liquid crystal displays and organic light‐emitting diode screens. This article introduces an innovative cholesteric liquid crystal‐based optical combiner for head‐mounted displays, enabling seamless transitions between augmented reality, virtual ...
Yuanjie Xia, Haobo Li, Marija Vaskeviciute, Daniele Faccio, Affar S. Karimullah, Hadi Heidari, Rami Ghannam   +6 more
wiley   +1 more source

Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors

Functional Diamond
Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof.
Jiangwei Liu
doaj   +1 more source

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P., de Groot, C.H., Gili, E., Hakim, M.M.A., Hall, S., Kunz, D., Uchino, T.   +6 more
core   +1 more source

Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs [PDF]

, 2022
Kumiko Konishi, Ryusei Fujita, Keisuke Kobayashi, Akio Yoneyama, Kotaro Ishiji, Hiroyuki Okino, Akio Shima, Toru Ujihara   +7 more
openalex   +1 more source