Results 81 to 90 of about 157,312 (300)
Pellet Printing for Soft Robotic Devices
Advanced Science, EarlyView.Fused Granulate Fabrication (FGF) is established here as a reliable method for fabricating soft, airtight robotic devices. Through coordinated optimization of hardware, material selection, and process parameters, this approach enables high‐speed printing of thermoplastic elastomers with silicone‐like softness and modulus.
Yijia Wu +6 more
wiley +1 more source
Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]
, 2019 The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M +6 more
core +1 more source
Advanced Science, EarlyView.This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley +1 more source
Monte Carlo simulations of high-performance implant free In0.3Ga0.7 nano-MOSFETs for low-power CMOS applications [PDF]
, 2007 No abstract ...
Asenov, A. +8 more
core +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, EarlyView.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications
, 2010 We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully
A. Abuelgasim +9 more
core +1 more source
Reluctance Accelerator Efficiency Optimization via Pulse Shaping [PDF]
, 2014 Reluctance accelerators are used to apply linear forces to ferromagnetic projectiles via solenoids. Ef ciency increases for a single-stage reluctance accelerator were produced by manipulating the input current pulse supplied by a discharging capacitor ...
Bartlett, PA +3 more
core +1 more source
Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
Advanced Electronic Materials, EarlyView.We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source
Spin resonance of 2D electrons in a large-area silicon MOSFET
, 2007 We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface.
A.M. Tyryshkin +16 more
core +1 more source
Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source