Results 1 to 10 of about 16,768 (238)

A scalable neural network emulator with MRAM-based mixed-signal circuits [PDF]

Frontiers in Neuroscience
In this study, we present a mixed-signal framework that utilizes MRAM (Magneto-resistive Random Access Memory) technology to emulate behaviors observed in biological neural networks on silicon substrates.
Jua Lee, Jua Lee, Jiho Song, Hyeon Seong Im, Jonghwi Kim, Woonjae Lee, Wooseok Yi, Soonwan Kwon, Byungsu Jung, Joohyoung Kim, Yoonmyung Lee, Jung-Hoon Chun   +11 more
doaj   +2 more sources

Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM [PDF]

Micromachines
As an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read–write speeds, thereby garnering considerable attention within the industry.
Haibo Ye, Xiaofei Zhang, Nannan Lu, Jiawei Li, Jun Jia, Guilin Zhao, Jiejie Sun, Lei Zhang, Chao Wang   +8 more
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Assessing the logistics industry efficiency with a modified range adjusted measure [PDF]

Scientific Reports
How to accurately assess logistics industry efficiency to identify production issues and provide support for optimizing logistics efficiency has become a current research challenge. Range adjust measure (RAM) is a method for efficiency assessment in data
Chongyu Ma, Jianwei Ren, Chunhua Chen
doaj   +2 more sources

TPCSA-MRAM: Ternary Precharge Sense Amplifier-Based MRAM

IEEE Access
The emerging multi-value logic technology in memory systems has increased data storage capacity and power efficiency. In this paper, to address the power consumption challenge of ternary memory, a ternary precharge sense amplifier (TPCSA)-based magnetic ...
Mohammad Mahdi Mazaheri, Abdolah Amirany, Mohammad Hossein Moaiyeri   +2 more
doaj   +2 more sources

Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies

Успехи физики металлов, 2021
The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory.
A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, I. A. Vladymyrskyi
doaj   +1 more source

DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories [PDF]

IEEE Electron Device Letters, 2013
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation.
Kim, Yusung, Choday, Sri Harsha, Roy, Kaushik   +2 more
openaire   +2 more sources

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness

AIP Advances, 2020
In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun, Jin-Young Choi, Kei Ashiba, Sun-Hwa Jung, Miri Park, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park   +7 more
doaj   +1 more source

Benchmarking and Optimization of Spintronic Memory Arrays

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
doaj   +1 more source

High-Accuracy Deep Belief Network: Fuzzy Neural Networks Using MRAM-Based Stochastic Neurons

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021
Two-terminal magnetoresistive random access memory (MRAM) devices provide a recent approach to intrinsically realizing stochastic neuronal behavior in cognitive architectures such as restricted Boltzmann machines (RBMs) for deep belief networks (DBNs ...
Hossein Pourmeidani, Ronald F. Demara
doaj   +1 more source