Results 141 to 150 of about 10,786 (185)

Observation of Out-of-Plane Antidamping Torque at the Platinum/Permalloy Interface. [PDF]

ACS Appl Mater Interfaces
Mohan JR, Shashank U, Deka A, Hanashima T, Medwal R, Gupta S, Rawat RS, Asada H, Fukuma Y.   +8 more
europepmc   +1 more source

Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization. [PDF]

Nat Nanotechnol
Garg C, Filippou PC, Ikhtiar, Ferrante Y, Yang SH, Hughes B, Rettner CT, Phung T, Faleev S, Topuria T, Samant MG, Jeong J, Parkin SSP.   +12 more
europepmc   +1 more source

Electrical manipulation of spin splitting torque in altermagnetic RuO₂. [PDF]

Nat Commun
Zhang Y, Bai H, Dai J, Han L, Chen C, Liang S, Cao Y, Zhang Y, Wang Q, Zhu W, Pan F, Song C.   +11 more
europepmc   +1 more source

Strategic resource allocation for malaria elimination in endemic settings: a systematic review of cost-effectiveness evidence. [PDF]

Front Public Health
Firdaus MH, Ho Imran DS, Puteh SEW, Zhueng TJ, Hamid MHA, Idris ZM, Manaf MRA.   +6 more
europepmc   +1 more source

Eddy Current Array for Defect Detection in Finely Grooved Structure Using MSTSA Network. [PDF]

Sensors (Basel)
Gao S, Zheng Y, Li S, Zhang J, Bai L, Ding Y.   +5 more
europepmc   +1 more source

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Recent Progresses in STT-MRAM and SOT-MRAM for Next Generation MRAM

2020 IEEE Symposium on VLSI Technology, 2020
In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies.
Tetsuo Endoh, Hiroaki Honjo, Koichi Nishioka, Shoji Ikeda   +3 more
openaire   +1 more source

R-MRAM: A ROM-Embedded STT MRAM Cache

IEEE Electron Device Letters, 2013
We present a new spin-transfer torque magnetic random access memory (STT MRAM) bit-cell that is embedded with read-only memory (ROM) functionality. The proposed ROM-embedded STT MRAM (R-MRAM) bit-cells include one extra bit-line. ROM data is stored by selectively connecting the magnetic tunnel junction (MTJ) to one of the two bit-lines.
Lee, Dongsoo, Fong, Xuanyao, Roy, Kaushik   +2 more
openaire   +1 more source

MRAM PUF

ACM Journal on Emerging Technologies in Computing Systems, 2016
In this work, we have studied two novel techniques to enhance the performance of existing geometry-based magnetoresistive RAM physically unclonable function (MRAM PUF). Geometry-based MRAM PUFs rely only on geometric variations in MRAM cells that generate preferred ground state in cells and form the basis of digital signature generation.
Jayita Das, Kevin Scott, Sanjukta Bhanja
openaire   +1 more source

Thermally assisted MRAM

Journal of Physics: Condensed Matter, 2007
A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing; the memory device comprising a tunnel barrier 14 sandwiched between a ferromagnetic sense layer 16 and a ferromagnetic storage layer 12. An antiferromagnetic pinning layer 30 is disposed adjacent to the ferromagnetic storage layer 12.
I L Prejbeanu, M Kerekes, R C Sousa, H Sibuet, O Redon, B Dieny, J P Nozières   +6 more
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Analytical MRAM test

2014 International Test Conference, 2014
Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement.
Raphael Robertazzi, Janusz Nowak, Jonathan Sun   +2 more
openaire   +1 more source