STT-BNN: A Novel STT-MRAM In-Memory Computing Macro for Binary Neural Networks
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2022 This paper presents a novel architecture for in-memory computation of binary neural network (BNN) workloads based on STT-MRAM arrays. In the proposed architecture, BNN inputs are fed through bitlines, then, a BNN vector multiplication can be done by ...
Thi-Nhan Pham +3 more
semanticscholar +1 more source
First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]
, 2011 Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck +19 more
core +3 more sources
On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj +1 more source
Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching
, 2011 A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses.
Abraham, David W. +3 more
core +1 more source
Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions [PDF]
, 2015 The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed ...
Buda-Prejbeanu, L. D. +4 more
core +2 more sources
IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
doaj +1 more source
Ballistic bit addressing in a magnetic memory cell array
, 2005 A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses ...
Schumacher, H. W.
core +1 more source
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj +1 more source
Tunable magnetization damping in transition metal ternary alloys
, 2004 We show that magnetization damping in Permalloy, Ni80Fe20 (``Py''), can be enhanced sufficiently to reduce post-switching magnetization precession to an acceptable level by alloying with the transition metal osmium (Os).
Brown W. F. +4 more
core +1 more source
Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions
, 2019 Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density.
Rzeszut, Piotr +4 more
core +1 more source