Results 41 to 50 of about 16,768 (238)

Ultra High-Density SOT-MRAM Design for Last-Level On-Chip Cache Application

Electronics, 2023
This paper presents ultra high-density spin-orbit torque magnetic random-access memory (SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many appealing attributes of low write energy, nonvolatility, and high reliability, it poses ...
Yeongkyo Seo, K. Kwon
semanticscholar   +1 more source

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

, 2018
Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold.
Wang, X. R., Wang, X. S., Yuan, H. Y., Zhang, Yin   +3 more
core   +1 more source

Multi-Retention STT-MRAM Architectures for IoT: Evaluating the Impact of Retention Levels and Memory Mapping Schemes

IEEE Access
In recent years, the energy consumption of IoT edge nodes has significantly increased due to the communication process. This necessitates the need to offload more computation to the edge nodes to minimize data transmission over the network.
Belal Jahannia, Seyed Ali Ghasemi, Hamed Farbeh   +2 more
semanticscholar   +1 more source

Detrimental Effect of Interfacial Dzyaloshinskii-Moriya Interaction on Perpendicular Spin-Transfer-Torque Magnetic Random Access Memory

, 2015
Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions.
Jang, Peong-Hwa, Lee, Kyung-Jin, Lee, Seo-Won, Lee, Seung-Jae, Song, Kyoungmi   +4 more
core   +1 more source

Domain-Specific STT-MRAM-Based In-Memory Computing: A Survey

IEEE Access
In recent years, the rapid growth of big data and the increasing demand for high-performance computing have fueled the development of novel computing architectures.
Alaba Yusuf, Tosiron Adegbija, Dhruv Gajaria   +2 more
semanticscholar   +1 more source

Asymmetry of the Ferroelectric Phase Transition in BaTiO3

Advanced Materials, EarlyView.
Phase transitions are typically assumed to behave identically in forward and reverse. This work shows that in the ferroelectric material barium titanate this is not true: heating drives an abrupt, first‐order jump, while cooling gives a smooth, continuous change.
Asaf Hershkovitz, Elangovan Hemaprabha, Rajesh Mandal, Pravin Kavle, Jamil Tanus, Maya Barzilay, Ching‐Che Lin, David Spirito, Semën Gorfman, Bo Wang, Ignacio J. Villar‐García, Neus Domingo, Long‐Qing Chen, Lane W. Martin, Yachin Ivry   +14 more
wiley   +1 more source

Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing

Advanced Electronic Materials
A stochastic binary neuron is developed for probabilistic computing using a perpendicular spin‐transfer torque (p‐STT) neuron device and its associated peripheral circuits.
Han‐Sol Jun, Dae‐Seong Woo, So‐Hyun Lee, Yohan Choi, Yeonsoo Shin, Tae‐Hun Shim, Jae‐Joon Kim, Jea‐Gun Park   +7 more
doaj   +1 more source

Adjustable spin torque in magnetic tunnel junctions with two fixed layers

, 2005
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure.
Braganca, P. M., Buhrman, R. A., Emley, N. C., Fuchs, G. D., Garcia, A. G. F., Krivorotov, I. N., Ralph, D. C.   +6 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source