Results 51 to 60 of about 16,768 (238)
, 2014 The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density maintaining the
Azzerboni, Bruno +3 more
core +1 more source
Current Switching of Topological Spin Chirality in the van der Waals Antiferromagnet Co1/3TaS2
Advanced Materials, EarlyView.Spin chirality plays a central role in quantum magnetism, governing spin winding and generating real‐space Berry phases. We propose the intriguing concept of current‐switching spin chirality and demonstrate it via unconventional intrinsic self‐spin‐orbit‐torque in pristine Co1/3TaS2, purely by electrical current and with high energy efficiency.
Kai‐Xuan Zhang +3 more
wiley +1 more source
Offset fields in perpendicularly magnetized tunnel junctions
, 2019 We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide.
Carpenter, R. +6 more
core +1 more source
Advanced Materials Technologies, EarlyView.Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li +4 more
wiley +1 more source
Materials, processes, devices and applications of magnetoresistive random access memory
International Journal of Extreme ManufacturingMagnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits.
Meiyin Yang +3 more
doaj +1 more source
Advanced Science, EarlyView.By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang +9 more
wiley +1 more source
STT-MRAM error correction technology based on LDPC coding
AIP Advances, 2020 Spin transfer magnetoresistive random access memory (STT-MRAM) shows potential applications with the properties of non-volatility, low power consumption and high write/read speed.
Xue Zhang, Jianbin Liu, Yanfeng Jiang
doaj +1 more source
, 2005 We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction ...
Bason, Y. +5 more
openaire +2 more sources
Scalable Emulation of Sign-Problem$-$Free Hamiltonians with Room Temperature p-bits
, 2019 The growing field of quantum computing is based on the concept of a q-bit which is a delicate superposition of 0 and 1, requiring cryogenic temperatures for its physical realization along with challenging coherent coupling techniques for entangling them.
Camsari, Kerem Y. +2 more
core +1 more source
Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source