Results 61 to 70 of about 16,768 (238)
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsWhile magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar +3 more
doaj +1 more source
Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency.
Naimul Hassan +3 more
doaj +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Ultra-Fast Perpendicular Spin–Orbit Torque MRAM [PDF]
IEEE Transactions on Magnetics, 2018 15 pages, 3 ...
Murat Cubukcu +16 more
openaire +6 more sources
Spatially resolved ultrafast precessional magnetization reversal
, 2002 Spatially resolved measurements of quasi-ballistic precessional magnetic switching in a microstructure are presented. Crossing current wires allow detailed study of the precessional switching induced by coincident longitudinal and transverse magnetic ...
B. C. Choi +15 more
core +1 more source
Spin and charge drift-diffusion in ultra-scaled MRAM cells
Scientific Reports, 2022 Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers.
S. Fiorentini +6 more
semanticscholar +1 more source
Advanced Electronic Materials, EarlyView.A concealable physical unclonable function (PUF) based on an array of 384 nanoscale voltage‐controlled magnetic tunnel junctions is demonstrated. The PUF operates without any external magnetic field. It uses a combination of deterministic and stochastic switching mechanisms, based on the spin transfer torque and voltage‐controlled magnetic anisotropy ...
Thomas Neuner +6 more
wiley +1 more source
IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
doaj +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant
, 2012 We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations.
You, Chun-Yeol
core +1 more source