Results 151 to 160 of about 95,287 (194)

Plasma-enhanced atomic layer deposition of zinc phosphate

Journal of Non-Crystalline Solids, 2016
Abstract Zinc phosphate thin films were grown by plasma-enhanced atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me 3 PO 4 ) plasma, O 2 plasma, and diethylzinc (DEZn, Et 2 Zn) exposures. The film growth was monitored by in-situ spectroscopic ellipsometry.
T. Dobbelaere, M. Minjauw, T. Ahmad, P.M. Vereecken, C. Detavernier   +4 more
openaire   +1 more source

Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition

ECS Transactions, 2011
AbaCus, a newly developed fluorine-free precursor has been used for room temperature copper deposition using plasma enhanced chemical vapor deposition (PEALD). This process has been characterized and the film properties investigated in term of composition, deposition rate, resistivity, grain size and platability.
Jiajun Mao, Eric Eisenbraun, Vincent Omarjee, Andrey Korolev, Christian Dussarrat   +4 more
openaire   +1 more source

Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015
Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known.
Triratna Muneshwar, Ken Cadien
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films

Chemistry of Materials, 2011
Thermal properties of various silver precursors known in the literature were evaluated in order to discover which precursor is the most suitable one for plasma-enhanced atomic layer deposition (PEALD) of silver thin films. Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) was found to be the best choice. Using Ag(fod)(PEt3)
Sajavaara Timo, Niinistö Jaakko, Kariniemi Maarit, Kemell Marianna, Leskelä Markku, Ritala Mikko, Hatanpää Timo, Sajavaara Timo   +7 more
openaire   +2 more sources

Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Journal of Vacuum Science & Technology A, 2022
Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power ...
Kevin A. Hatch, Daniel C. Messina, Robert J. Nemanich   +2 more
openaire   +1 more source

Plasma Enhanced Atomic Layer Deposition of TaN Thin Films

ECS Meeting Abstracts, 2010
Abstract not Available.
Paul Ma, Jiang Lu
openaire   +1 more source

Plasma-enhanced atomic layer deposition of superconducting niobium nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016
Thin films of niobium nitride are useful for their physical, chemical, and electrical properties. NbN superconducting properties have been utilized in a wide range of applications. Plasma-enhanced atomic layer deposition (PEALD) of NbN with (t-butylimido) tris(diethylamido) niobium(V) and remote H2/N2 plasmas has been investigated.
Mark J. Sowa, Yonas Yemane, Jinsong Zhang, Johanna C. Palmstrom, Ling Ju, Nicholas C. Strandwitz, Fritz B. Prinz, J. Provine   +7 more
openaire   +1 more source

Plasma Enhanced Atomic Layer Deposited Ru for MIMCAP Applications

ECS Meeting Abstracts, 2011
Abstract not Available.
Johan Swerts, M.M. Salimullah, M. Popovici, M.-S. Kim, M.A. Pawlak, A. Delabie, M. Schaekers, K. Tomida, B. Kaczer, K. Opsomer, C. Vrancken, I Debusschere, L. Altimime, J.A. Kittl, S. Van Elshocht   +14 more
openaire   +1 more source

Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films

Electrochemical and Solid-State Letters, 2004
This work was supported by the project of National Research Laboratory ~NRL!. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.
Kwon, OK, Kwon, SH, Park, HS, Kang, SW
openaire   +2 more sources

Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
Abstract Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO2 films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better ...
Duo Cao, Xinhong Cheng, Tingting Jia, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu   +7 more
openaire   +1 more source