Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
Nanoscale Research Letters, 2021 In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching.
Yen-Wei Yeh +10 more
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High-quality cobalt thin films by plasma-enhanced atomic layer deposition [PDF]
High-quality Co films with low resistivity (10 mu Omega cm) were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from metallorganic precursors and NH3 plasma. The deposition characteristics and film properties were investigated. Especially,
Kim, H, Lee, HBR
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AIP Advances, 2021 Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using di-isopropylaminosilane and oxygen with different plasma times. While SiO2 films deposited with a short plasma time of
Taehyeon Kim +5 more
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Ultra-long-term reliable encapsulation using an atomic layer deposited Hfo2/Al2o3/Hfo2 triple-interlayer for biomedical implants [PDF]
, 2019 Long-term packaging of miniaturized, flexible implantable medical devices is essential for the next generation of medical devices. Polymer materials that are biocompatible and flexible have attracted extensive interest for the packaging of implantable ...
Cauwe, Maarten +5 more
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Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettability [PDF]
, 2020 The atomic layer deposition (ALD) of yttrium oxide (Y2O3) is investigated using the liquid precursor Y(EtCp)2(iPr-amd) as the yttrium source with thermal (H2O) and plasma-enhanced (H2O plasma and O2 plasma) processes, respectively.
Dendooven, Jolien +4 more
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Reduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment [PDF]
, 2007 Plasma enhanced chemical vapor deposition phosphoros-doped silicon oxynitride (SiON) layers with a refractive index of 1.505 were deposited from $N_{2}O$, 2% $SiH_{4}/N_{2}$, and 5% $PH_{3}/Ar$ gaseous mixtures.
Driessen, A. +3 more
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Unlocking Ferroelectricity in Scalable AlBN Films via Plasma‐Enhanced Atomic Layer Deposition
Advanced Electronic MaterialsFerroelectric metal nitride thin films, particularly AlScN, have recently emerged as transformative materials for next‐generation electronics, owing to their high polarization, tunable coercive fields, exceptional endurance, and thermal stability.
Jayeong Lee +9 more
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Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer [PDF]
Titanium oxide (TiO2) layer was used to control the flatband voltage (V-FB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics ...
Kim, H +6 more
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Optimization of $Al/AlO_x/Al$-Layer Systems for Josephson Junctions from a Microstructure Point of View [PDF]
, 2019 $Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of ...
Fritz, S. +4 more
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AIP Advances, 2016 The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films
J. Provine +6 more
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