Results 91 to 100 of about 95,287 (195)

Uniformity of HfO₂ Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanomaterials (Basel), 2022
Choi B, Kim HU, Jeon N.
europepmc   +1 more source

Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N'-di-butylacetamidinato)iron(II). [PDF]

Nanomaterials (Basel), 2023
Choi B, Park GW, Jeong JR, Jeon N.
europepmc   +1 more source

Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

AIP Advances, 2019
Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C.
Heungseop Song, Donghyuk Shin, Ji-eun Jeong, Heungsoo Park, Dae-Hong Ko   +4 more
doaj   +1 more source

Atomic-Level Sn Doping Effect in Ga₂O₃ Films Using Plasma-Enhanced Atomic Layer Deposition. [PDF]

Nanomaterials (Basel), 2022
Shen Y, Ma HP, Gu L, Zhang J, Huang W, Zhu JT, Zhang QC.   +6 more
europepmc   +1 more source

Influence of deposition temperature on microstructure and gas-barrier properties of Al₂O₃ prepared by plasma-enhanced atomic layer deposition on a polycarbonate substrate. [PDF]

RSC Adv, 2023
Ren Y, Sun X, Chen L, Wei H, Feng B, Chen J.   +5 more
europepmc   +1 more source

Effect of a ZrO₂ Seed Layer on an Hf_0.5Zr_0.5O₂ Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition. [PDF]

Materials (Basel), 2023
Song JN, Oh MJ, Yoon CB.
europepmc   +1 more source

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Advanced Materials Interfaces
The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons ...
Yoon‐Seo Kim, Taewon Hwang, Hye‐Jin Oh, Joon Seok Park, Jin‐Seong Park   +4 more
doaj   +1 more source

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture. [PDF]

Int J Mol Sci, 2022
Jiang S, Wu WY, Ren F, Hsu CH, Zhang X, Gao P, Wuu DS, Huang CJ, Lien SY, Zhu W.   +9 more
europepmc   +1 more source

Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

, 2018
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high ...
Carrad, D.J.,, Cochrane, J.W.,, Gluschke, J.G.,, Lehmann, Sebastian,, Lund University., Lund University., Lyttleton, Roman,, Micholich, A.P.,, Samuelson, Lars,, Seidl, J.,   +9 more
core   +1 more source

Bottom-up plasma-enhanced atomic layer deposition of SiO₂ by utilizing growth inhibition using NH₃ plasma pre-treatment for seamless gap-fill process. [PDF]

Sci Rep, 2022
Choi Y, Kim T, Lee H, Park J, Park J, Ryu D, Jeon W.   +6 more
europepmc   +1 more source