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Plasma Enhanced Atomic Layer Deposited Ru for MIMCAP Applications
ECS Meeting Abstracts, 2011Abstract not Available.
Johan Swerts +14 more
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Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
Electrochemical and Solid-State Letters, 2004This work was supported by the project of National Research Laboratory ~NRL!. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article.
Kwon, OK, Kwon, SH, Park, HS, Kang, SW
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Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013Abstract Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO2 films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better ...
Duo Cao +7 more
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Characteristics and applications of plasma enhanced-atomic layer deposition
Thin Solid Films, 2011Abstract Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ...
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Properties of Aluminum Silicate Deposited by Plasma Enhanced Atomic Layer Deposition
ECS Meeting Abstracts, 2006Abstract not Available.
Jung Wook Lim, Sun Jin Yun, Jin Ho Lee
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Micro and Nanosystems, 2018
As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future.
Guangjie Yuan +3 more
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As feature sizes of devices shrink every year, deposition and etching processes change to be very challenge, especially for sub-7 nm technology node. The acceptable variability of feature size is expected to be several atoms of silicon/germanium in the future.
Guangjie Yuan +3 more
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Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition
ECS Meeting Abstracts, 2006Abstract not Available.
Sun-Jin Yun, Jung-Wook Lim, Hyun-Tak Kim
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
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Ta 2 O 5 films were deposited by plasma-enhanced atomic layer deposition (PEALD) and thermal ALD on native oxide surface (SiOx∕Si). The properties of as-deposited and forming gas annealed films were examined and qualitatively compared with respect to nanostructural, nanochemical, capacitance-voltage and leakage-current–voltage (JL-V), and oxide ...
Diefeng Gu +4 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005
Low via yield caused by low adhesion between Cu and a barrier metal is a cost issue when the atomic layer deposition (ALD) barrier metal process is integrated with Cu interconnection. To overcome this issue, an adhesion layer consisting of Ta-rich TaN obtained by plasma-enhanced ALD [i.e., ALD Ta(N)] is proposed.
Akira Furuya +2 more
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Low via yield caused by low adhesion between Cu and a barrier metal is a cost issue when the atomic layer deposition (ALD) barrier metal process is integrated with Cu interconnection. To overcome this issue, an adhesion layer consisting of Ta-rich TaN obtained by plasma-enhanced ALD [i.e., ALD Ta(N)] is proposed.
Akira Furuya +2 more
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Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2015This paper reports on aluminum oxide (Al2O3) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O2 plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al2O3 films on silicon and indium tin oxide coated ...
Lukas Hoffmann +5 more
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