Results 31 to 40 of about 95,287 (195)
Plasma-enhanced atomic layer deposition of Zn-doped GaP
Journal of Physics: Conference Series, 2021 Abstract The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES).
A V Uvarov +4 more
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Enhanced surface passivation of AlGaN/GaN HEMTs via GaON-engineered interface for improved performance [PDF]
AIP AdvancesIn this study, we report a novel multi-step surface passivation scheme for AlGaN/GaN high electron mobility transistors, integrating oxygen plasma treatment followed by high-temperature annealing (OPANT), Wet Buffered Oxide Etch (BOE) wet etching, remote
Xiao Wang +4 more
doaj +1 more source
Frontiers in Mechanical Engineering, 2020 In this paper, theoretical and experimental approaches were used to evaluate the impact of the precursor's pulse time on the growth per cycle and the crystallinity quality of atomic layer deposited TiO2 thin films on Si(100) and FTO substrates. We employ
William Chiappim +5 more
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Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition [PDF]
, 2012 Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 °C and effective passivation is still achieved. Samples passivated
Bosund, M. +4 more
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Nanomaterials, 2023 In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced.
João Chaves +6 more
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The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Nanomaterials, 2021 With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry.
Guibai Xie +7 more
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Plasma-enhanced atomic layer deposition of vanadium nitride
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2019 This work describes process development and associated characterization of a plasma-enhanced atomic layer deposition process for vanadium nitride (VN) using tetrakis(dimethylamido)vanadium and nitrogen plasma over a deposition temperature range from 150 to 300 °C.
Alexander C. Kozen +7 more
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Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
Crystals, 2020 Direct plasma enhanced-atomic layer deposition (PE-ALD) is adopted for the growth of ZnO on c-Si with native oxide at room temperature. The initial stages of growth both in terms of thickness evolution and crystallization onset are followed ex-situ by a ...
Alberto Perrotta +4 more
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Journal of Materials Research and Technology, 2023 Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition.
Xiao-Ying Zhang +12 more
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Current Directions in Biomedical Engineering, 2021 High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice of material due to its biocompatibility, low electrochemical ...
Simon Nicolai +3 more
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