A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors [PDF]
, 2013 Cataloged from PDF version of article.In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD).
Aydinli, A., Muti, A., Salihoglu, O.
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Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT
Advanced Materials Interfaces, 2023 Oxide semiconductors are promising semiconducting materials for next‐generation thin‐film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as
Namgyu Woo +2 more
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Atomic layer deposition of aluminum phosphate based on the plasma polymerization of trimethyl phosphate [PDF]
, 2014 Aluminum phosphate thin films were deposited by plasma-assisted atomic layer deposition (ALD) using a sequence of trimethyl phosphate (TMP, Me3PO4) plasma, O-2 plasma, and trimethylaluminum (TMA, Me3Al) exposures.
Detavernier, Christophe +3 more
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Advanced Materials Interfaces, 2023 HfO2 thin films are appealing for microelectronic applications such as high‐κ dielectric layers, memristors, and ferroelectric memory devices. To fulfill the different requirements of each application, the properties of the deposited material need to be ...
Florian Preischel +6 more
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Plasma Processing of III-V Materials for Energy Efficient Electronics Applications [PDF]
, 2017 This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors.
Fu, Yen-Chun +4 more
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Passivation effects of atomic-layer-deposited aluminum oxide
EPJ Photovoltaics, 2013 Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2) in combination with a low ...
Kotipalli R. +5 more
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19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact. [PDF]
, 2014 We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact.
Battaglia, Corsin +8 more
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Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition [PDF]
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020 In this paper, the emerging role of ionic species in plasma assisted chemical deposition processes is discussed in detail for commemorating the Career of John Coburn, who studied the role of ionic species in plasma etching processes forty years ago. It is shown that, in both plasma enhanced chemical vapor deposition and plasma enhanced atomic layer ...
Christophe Vallée +12 more
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Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films [PDF]
Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from TiCl4, SiH4, and N-2/H-2/Ar plasma at 350 degrees C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from TiCl4.
Kang, SW, Kim, H, Park, JS
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Janus monolayers of transition metal dichalcogenides. [PDF]
, 2017 Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers ...
A Manchon +48 more
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