Results 91 to 100 of about 4,054 (213)

AI‐enabled bumpless transfer control strategy for legged robot with hybrid energy storage system

open access: yesCAAI Transactions on Intelligence Technology, EarlyView.
Abstract Designing Hybrid energy storage system (HESS) for a legged robot is significant to improve the motion performance and energy efficiency of the robot. However, switching between the driving mode and regenerative braking mode in the HESS may generate a torque bump, which has brought significant challenges to the stability of the robot locomotion.
Zhiwu Huang   +6 more
wiley   +1 more source

Sample environment for operando solid‐state battery characterization

open access: yesJournal of Applied Crystallography, EarlyView.
A versatile sample environment enabling operando studies of solid‐state batteries with temperature control and pressure monitoring is described.All‐solid‐state batteries provide new hope for developing electrical energy storage far beyond the current state of the art.
Therese S. S. Faurskov   +11 more
wiley   +1 more source

A Low‐Cost and Compact High‐Frequency Gallium Nitride Gradient Power Amplifier for Low‐Field MRI

open access: yesMagnetic Resonance in Medicine, Volume 95, Issue 5, Page 2992-2999, May 2026.
ABSTRACT Purpose To reduce the upfront cost of small, low‐field MRI systems, while expanding the capabilities of their gradient systems. Methods A gradient power amplifier was designed to leverage the lowering cost of Gallium Nitride (GaN) power transistors and high speed logic, to achieve high efficiency and responsiveness for driving gradient coils ...
N. Reid Bolding   +7 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, Volume 36, Issue 23, 19 March 2026.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

Engineering Active Metal Oxide Interfaces on MOF‐Derived 3D Carbon Architecture for Small‐Molecule Biosensing

open access: yesAdvanced Materials Interfaces, Volume 13, Issue 5, 4 March 2026.
MOFs awaken graphene. MOF‐assisted ultrafast laser writing patterns porous laser‐induced graphene with CuO‐active nanodomains, creating an aptamer‐ready interface for small‐molecule capture. Coupled to an extended‐gate FET, the hybrid converts subtle biochemical binding into a clear electrical signal for resilient cortisol sensing in aqueous media ...
Co Dang Pham   +2 more
wiley   +1 more source

Wireless and Soft Pulse Wave Measurement Device with Printed Ferroelectric E‐tattoo Sensor

open access: yesAdvanced Sensor Research, Volume 5, Issue 3, March 2026.
ABSTRACT We propose a non‐invasive pulse wave monitoring system that integrates a fully printed, partially stretchable ferroelectric electronic tattoo (e‐tattoo) sensor with a soft, elastomer‐encapsulated, partially stretchable data transmission unit (DTU).
Karem Lozano Montero   +14 more
wiley   +1 more source

Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET

open access: yesKongzhi Yu Xinxi Jishu, 2016
With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj  

Behavioral Modeling of SiC MOSFET Static and Dynamic Characteristics Based on Particle Swarm Optimization Algorithm

open access: yesIEEE Access
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj   +1 more source

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

open access: yesAdvanced Science, Volume 13, Issue 16, 18 March 2026.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang   +5 more
wiley   +1 more source

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